Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto; Takashi Ohsawa

doi:10.1016/j.sse.2009.03.010

Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto, Takashi Ohsawa

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

Original language	English
Pages (from-to)	676-683
Number of pages	8
Journal	Solid-State Electronics
Volume	53
Issue number	7
DOIs	https://doi.org/10.1016/j.sse.2009.03.010
Publication status	Published - 2009 Jul
Externally published	Yes

Keywords

DRAM
Hot carriers
MOSFETs
Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2009.03.010

Cite this

@article{1fd10258154648a5b26333c4636f3314,

title = "Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond",

abstract = "Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.",

keywords = "DRAM, Hot carriers, MOSFETs, Silicon-on-insulator (SOI) technology",

author = "Takeshi Hamamoto and Takashi Ohsawa",

year = "2009",

month = jul,

doi = "10.1016/j.sse.2009.03.010",

language = "English",

volume = "53",

pages = "676--683",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

AU - Hamamoto, Takeshi

AU - Ohsawa, Takashi

PY - 2009/7

Y1 - 2009/7

N2 - Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

AB - Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

KW - DRAM

KW - Hot carriers

KW - MOSFETs

KW - Silicon-on-insulator (SOI) technology

UR - http://www.scopus.com/inward/record.url?scp=67349159445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349159445&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2009.03.010

DO - 10.1016/j.sse.2009.03.010

M3 - Article

AN - SCOPUS:67349159445

VL - 53

SP - 676

EP - 683

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -

Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this