Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto; Takashi Ohsawa

doi:10.1016/j.sse.2009.03.010

Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto, Takashi Ohsawa

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

Original language	English
Pages (from-to)	676-683
Number of pages	8
Journal	Solid-State Electronics
Volume	53
Issue number	7
DOIs	https://doi.org/10.1016/j.sse.2009.03.010
Publication status	Published - 2009 Jul
Externally published	Yes

Keywords

DRAM
Hot carriers
MOSFETs
Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2009.03.010

Fingerprint Dive into the research topics of 'Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond'. Together they form a unique fingerprint.

Cite this

@article{1fd10258154648a5b26333c4636f3314,

title = "Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond",

abstract = "Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.",

keywords = "DRAM, Hot carriers, MOSFETs, Silicon-on-insulator (SOI) technology",

author = "Takeshi Hamamoto and Takashi Ohsawa",

year = "2009",

month = jul,

doi = "10.1016/j.sse.2009.03.010",

language = "English",

volume = "53",

pages = "676--683",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

AU - Hamamoto, Takeshi

AU - Ohsawa, Takashi

PY - 2009/7

Y1 - 2009/7

N2 - Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

AB - Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

KW - DRAM

KW - Hot carriers

KW - MOSFETs

KW - Silicon-on-insulator (SOI) technology

UR - http://www.scopus.com/inward/record.url?scp=67349159445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349159445&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2009.03.010

DO - 10.1016/j.sse.2009.03.010

M3 - Article

AN - SCOPUS:67349159445

VL - 53

SP - 676

EP - 683

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -