Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto, Takashi Ohsawa

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

Original languageEnglish
Pages (from-to)676-683
Number of pages8
JournalSolid-State Electronics
Volume53
Issue number7
DOIs
Publication statusPublished - 2009 Jul 1
Externally publishedYes

Keywords

  • DRAM
  • Hot carriers
  • MOSFETs
  • Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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