Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto, Takashi Ohsawa

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

Original languageEnglish
Pages (from-to)676-683
Number of pages8
JournalSolid-State Electronics
Volume53
Issue number7
DOIs
Publication statusPublished - 2009 Jul
Externally publishedYes

Fingerprint

Random access storage
floating
Data storage equipment
cells
Scalability
Transistors
SOI (semiconductors)
Substrates
transistors

Keywords

  • DRAM
  • Hot carriers
  • MOSFETs
  • Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond. / Hamamoto, Takeshi; Ohsawa, Takashi.

In: Solid-State Electronics, Vol. 53, No. 7, 07.2009, p. 676-683.

Research output: Contribution to journalArticle

@article{1fd10258154648a5b26333c4636f3314,
title = "Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond",
abstract = "Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.",
keywords = "DRAM, Hot carriers, MOSFETs, Silicon-on-insulator (SOI) technology",
author = "Takeshi Hamamoto and Takashi Ohsawa",
year = "2009",
month = "7",
doi = "10.1016/j.sse.2009.03.010",
language = "English",
volume = "53",
pages = "676--683",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "7",

}

TY - JOUR

T1 - Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

AU - Hamamoto, Takeshi

AU - Ohsawa, Takashi

PY - 2009/7

Y1 - 2009/7

N2 - Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

AB - Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

KW - DRAM

KW - Hot carriers

KW - MOSFETs

KW - Silicon-on-insulator (SOI) technology

UR - http://www.scopus.com/inward/record.url?scp=67349159445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349159445&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2009.03.010

DO - 10.1016/j.sse.2009.03.010

M3 - Article

AN - SCOPUS:67349159445

VL - 53

SP - 676

EP - 683

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -