TY - JOUR
T1 - Oxidation on poly silicon at low temperature using UV light-excited ozone gas
AU - Kameda, Naoto
AU - Nishiguchi, Tetsuya
AU - Morikawa, Yoshiki
AU - Kekura, Mitsuru
AU - Nonaka, Hidehiko
AU - Ichimura, Shingo
N1 - Funding Information:
This research was sponsored by National Science Council, Taiwan, under Grant No. NSC86-2611-E-110-006.
PY - 2007
Y1 - 2007
N2 - We have grown SiO2 film on the polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, and characterized the electric properties of the SiO2 film at the MIS capacitor configuration. Even at room temperature, the SiO2 of ∼8.5 nm thick can be grown in 60 min. on 1.5 × 1.5 cm2 poly-Si chips. The leakage current density across the SiO2 film was well fitted to the F-N tunnel current over 6 MV/cm and the breakdown occurred at above 12 MV/cm showing that the film properties satisfy the device quality. The oxidation rate of Si by the excited ozone gas did not show difference on between Si(100) and Si (111) wafers. These results indicate that excited ozone gas can form homogenous SiO2 film on the poly-silicon layer with grains with various silicon crystal orientations at the surfaces.
AB - We have grown SiO2 film on the polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, and characterized the electric properties of the SiO2 film at the MIS capacitor configuration. Even at room temperature, the SiO2 of ∼8.5 nm thick can be grown in 60 min. on 1.5 × 1.5 cm2 poly-Si chips. The leakage current density across the SiO2 film was well fitted to the F-N tunnel current over 6 MV/cm and the breakdown occurred at above 12 MV/cm showing that the film properties satisfy the device quality. The oxidation rate of Si by the excited ozone gas did not show difference on between Si(100) and Si (111) wafers. These results indicate that excited ozone gas can form homogenous SiO2 film on the poly-silicon layer with grains with various silicon crystal orientations at the surfaces.
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U2 - 10.3131/jvsj.50.208
DO - 10.3131/jvsj.50.208
M3 - Article
AN - SCOPUS:34250780580
SN - 0559-8516
VL - 50
SP - 208
EP - 210
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
IS - 3
ER -