Oxidation on poly silicon at low temperature using UV light-excited ozone gas

Naoto Kameda, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have grown SiO2 film on the polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, and characterized the electric properties of the SiO2 film at the MIS capacitor configuration. Even at room temperature, the SiO2 of ∼8.5 nm thick can be grown in 60 min. on 1.5 × 1.5 cm2 poly-Si chips. The leakage current density across the SiO2 film was well fitted to the F-N tunnel current over 6 MV/cm and the breakdown occurred at above 12 MV/cm showing that the film properties satisfy the device quality. The oxidation rate of Si by the excited ozone gas did not show difference on between Si(100) and Si (111) wafers. These results indicate that excited ozone gas can form homogenous SiO2 film on the poly-silicon layer with grains with various silicon crystal orientations at the surfaces.

Original languageEnglish
Pages (from-to)208-210
Number of pages3
JournalShinku/Journal of the Vacuum Society of Japan
Volume50
Issue number3
DOIs
Publication statusPublished - 2007 Jun 28
Externally publishedYes

Fingerprint

Ozone
Silicon
Ultraviolet radiation
ozone
Gases
Oxidation
oxidation
silicon
gases
Temperature
Management information systems
MIS (semiconductors)
Polysilicon
Leakage currents
Crystal orientation
ultraviolet radiation
tunnels
capacitors
Tunnels
Electric properties

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces

Cite this

Oxidation on poly silicon at low temperature using UV light-excited ozone gas. / Kameda, Naoto; Nishiguchi, Tetsuya; Morikawa, Yoshiki; Kekura, Mitsuru; Nonaka, Hidehiko; Ichimura, Shingo.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 50, No. 3, 28.06.2007, p. 208-210.

Research output: Contribution to journalArticle

Kameda, Naoto ; Nishiguchi, Tetsuya ; Morikawa, Yoshiki ; Kekura, Mitsuru ; Nonaka, Hidehiko ; Ichimura, Shingo. / Oxidation on poly silicon at low temperature using UV light-excited ozone gas. In: Shinku/Journal of the Vacuum Society of Japan. 2007 ; Vol. 50, No. 3. pp. 208-210.
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