Oxidation properties of silicon nitride thin films fabricated by double tubed coaxial line type microwave plasma chemical vapor deposition

Isamu Kato, Kouji Numada, Yukihiro Kiyota

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6 Citations (Scopus)

Abstract

Silicon nitride films have fabricated under different deposition conditions using a double tubed coaxial line type microwave plasma chemical vapor deposition system. The oxidation and annealing properties of the films have been analyzed using infrared absorption spectroscopy. It is shown that oxidation proceeds via (Si-H2)n bonds in the voids. During the process, hydrogen atoms are released. The N-H bonds which form the remainder in the bulk are not affected by oxidation. Based on this finding, films which have a large concentration of N-H bonds and a lower concentration of Si-H bonds show greater resistance to oxidation. Under adequate conditions, the stoichiometric oxidation-resistant silicon nitride films can be fabricated outside the discharge plasma even at room temperature.

Original languageEnglish
Pages (from-to)1401-1405
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume27
Issue number8
Publication statusPublished - 1988 Aug

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Silicon nitride
silicon nitrides
Chemical vapor deposition
Microwaves
vapor deposition
Plasmas
microwaves
Thin films
Oxidation
oxidation
thin films
Hydrogen
Infrared absorption
Absorption spectroscopy
plasma jets
infrared absorption
voids
low concentrations
Infrared spectroscopy
hydrogen atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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AU - Kato, Isamu

AU - Numada, Kouji

AU - Kiyota, Yukihiro

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N2 - Silicon nitride films have fabricated under different deposition conditions using a double tubed coaxial line type microwave plasma chemical vapor deposition system. The oxidation and annealing properties of the films have been analyzed using infrared absorption spectroscopy. It is shown that oxidation proceeds via (Si-H2)n bonds in the voids. During the process, hydrogen atoms are released. The N-H bonds which form the remainder in the bulk are not affected by oxidation. Based on this finding, films which have a large concentration of N-H bonds and a lower concentration of Si-H bonds show greater resistance to oxidation. Under adequate conditions, the stoichiometric oxidation-resistant silicon nitride films can be fabricated outside the discharge plasma even at room temperature.

AB - Silicon nitride films have fabricated under different deposition conditions using a double tubed coaxial line type microwave plasma chemical vapor deposition system. The oxidation and annealing properties of the films have been analyzed using infrared absorption spectroscopy. It is shown that oxidation proceeds via (Si-H2)n bonds in the voids. During the process, hydrogen atoms are released. The N-H bonds which form the remainder in the bulk are not affected by oxidation. Based on this finding, films which have a large concentration of N-H bonds and a lower concentration of Si-H bonds show greater resistance to oxidation. Under adequate conditions, the stoichiometric oxidation-resistant silicon nitride films can be fabricated outside the discharge plasma even at room temperature.

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