Oxygen ion implantation at 20 to 2000 keV into polysulfone for improvement of endothelial cell adhesion

Guochun Xu, Yutaka Hibino, Yasuo Suzuki, Yoshiaki Suzuki, Kimi Kurotobi, Minoru Osada, Masaya Iwaki, Makoto Kaibara, Masao Tanihara, Yukio Imanishi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The irradiation effects of oxygen on polysulfone have been investigated at energies of 20 keV, 150 keV and 2 MeV. The strong improvement of endothelial cell adhesion and proliferation is found on ion irradiated polysulfone at 20 keV. Such improvement is declined with increasing ion energy. The changes of surface color and free energy are strongly dependent on ion energy and dose. The formation of amorphous carbon phase is demonstrated by Raman spectroscopy and its degree is correspondent to the color changes observed. The formations of hydroxyl and carboxyl groups are confirmed by the attenuated total reflectance (ATR) FTIR spectroscopy. The depletions of heteroatoms are conjectured by detail analysis of X-ray photoelectron spectroscopy (XPS). Since no single one of these changes can be related directly to the improved adhesion and proliferation of endothelial cells on irradiated surface, we argue that the distribution of functional groups is crucial in promoting the adhesion of endothelial cells. Although the distribution cannot directly be detected at present, the irradiation effects were related to the results of TRIM simulation. The surface changes can be controlled by adjusting the size energy and dose of irradiating ion for the optimum morphology to cell adhesion. (C) 2000 Elsevier Science B.V.

Original languageEnglish
Pages (from-to)237-247
Number of pages11
JournalColloids and Surfaces B: Biointerfaces
Volume19
Issue number3
DOIs
Publication statusPublished - 2000 Dec 30
Externally publishedYes

Fingerprint

Polysulfones
Cell adhesion
Endothelial cells
oxygen ions
Cell Adhesion
Ion implantation
ion implantation
adhesion
Endothelial Cells
Ions
Oxygen
Adhesion
Color
Irradiation
ions
Photoelectron Spectroscopy
Raman Spectrum Analysis
energy
Amorphous carbon
Cell proliferation

Keywords

  • Cell adhesion
  • Endothelial cell
  • Ion beam
  • Irradiation effect
  • Polysulfone

ASJC Scopus subject areas

  • Biotechnology
  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry
  • Surfaces and Interfaces

Cite this

Oxygen ion implantation at 20 to 2000 keV into polysulfone for improvement of endothelial cell adhesion. / Xu, Guochun; Hibino, Yutaka; Suzuki, Yasuo; Suzuki, Yoshiaki; Kurotobi, Kimi; Osada, Minoru; Iwaki, Masaya; Kaibara, Makoto; Tanihara, Masao; Imanishi, Yukio.

In: Colloids and Surfaces B: Biointerfaces, Vol. 19, No. 3, 30.12.2000, p. 237-247.

Research output: Contribution to journalArticle

Xu, G, Hibino, Y, Suzuki, Y, Suzuki, Y, Kurotobi, K, Osada, M, Iwaki, M, Kaibara, M, Tanihara, M & Imanishi, Y 2000, 'Oxygen ion implantation at 20 to 2000 keV into polysulfone for improvement of endothelial cell adhesion', Colloids and Surfaces B: Biointerfaces, vol. 19, no. 3, pp. 237-247. https://doi.org/10.1016/S0927-7765(00)00161-2
Xu, Guochun ; Hibino, Yutaka ; Suzuki, Yasuo ; Suzuki, Yoshiaki ; Kurotobi, Kimi ; Osada, Minoru ; Iwaki, Masaya ; Kaibara, Makoto ; Tanihara, Masao ; Imanishi, Yukio. / Oxygen ion implantation at 20 to 2000 keV into polysulfone for improvement of endothelial cell adhesion. In: Colloids and Surfaces B: Biointerfaces. 2000 ; Vol. 19, No. 3. pp. 237-247.
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