Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs

Jin Yu Shiu, Jui Chien Huang, Vincent Desmaris, Chia Ta Chang, Chung Yu Lu, Kazuhide Kumakura, Toshiki Makimoto, Herbert Zirath, Niklas Rorsman, Edward Yi Chang

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V = Vds=50 and a maximum power added efficiency of 51.5% at V =-4 V Vds=30 at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.

Original languageEnglish
Pages (from-to)476-478
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number6
DOIs
Publication statusPublished - 2007 Jun
Externally publishedYes

Fingerprint

High electron mobility transistors
Ion implantation
Oxygen
Electron gas
Aluminum Oxide
Sapphire
Microwaves
aluminum gallium nitride
Substrates
Processing

Keywords

  • GaN
  • High electron mobility transistors (HEMTs)
  • Implantation
  • Power density
  • Pulsed I-V
  • Transient

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shiu, J. Y., Huang, J. C., Desmaris, V., Chang, C. T., Lu, C. Y., Kumakura, K., ... Chang, E. Y. (2007). Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs. IEEE Electron Device Letters, 28(6), 476-478. https://doi.org/10.1109/LED.2007.896904

Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs. / Shiu, Jin Yu; Huang, Jui Chien; Desmaris, Vincent; Chang, Chia Ta; Lu, Chung Yu; Kumakura, Kazuhide; Makimoto, Toshiki; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi.

In: IEEE Electron Device Letters, Vol. 28, No. 6, 06.2007, p. 476-478.

Research output: Contribution to journalArticle

Shiu, JY, Huang, JC, Desmaris, V, Chang, CT, Lu, CY, Kumakura, K, Makimoto, T, Zirath, H, Rorsman, N & Chang, EY 2007, 'Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs', IEEE Electron Device Letters, vol. 28, no. 6, pp. 476-478. https://doi.org/10.1109/LED.2007.896904
Shiu JY, Huang JC, Desmaris V, Chang CT, Lu CY, Kumakura K et al. Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs. IEEE Electron Device Letters. 2007 Jun;28(6):476-478. https://doi.org/10.1109/LED.2007.896904
Shiu, Jin Yu ; Huang, Jui Chien ; Desmaris, Vincent ; Chang, Chia Ta ; Lu, Chung Yu ; Kumakura, Kazuhide ; Makimoto, Toshiki ; Zirath, Herbert ; Rorsman, Niklas ; Chang, Edward Yi. / Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 6. pp. 476-478.
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