Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs

Jin Yu Shiu; Jui Chien Huang; Vincent Desmaris; Chia Ta Chang; Chung Yu Lu; Kazuhide Kumakura; Toshiki Makimoto; Herbert Zirath; Niklas Rorsman; Edward Yi Chang

doi:10.1109/LED.2007.896904

Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs

Jin Yu Shiu^*, Jui Chien Huang, Vincent Desmaris, Chia Ta Chang, Chung Yu Lu, Kazuhide Kumakura, Toshiki Makimoto, Herbert Zirath, Niklas Rorsman, Edward Yi Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V_gs = -4 V = V_ds=50 and a maximum power added efficiency of 51.5% at V =-4 V V_ds=30 at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.

Original language	English
Pages (from-to)	476-478
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	6
DOIs	https://doi.org/10.1109/LED.2007.896904
Publication status	Published - 2007 Jun
Externally published	Yes

Keywords

GaN
High electron mobility transistors (HEMTs)
Implantation
Power density
Pulsed I-V
Transient

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.896904

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@article{e0e283adb1d9421ca3bbbc17ed2607e5,

title = "Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs",

abstract = "A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V = Vds=50 and a maximum power added efficiency of 51.5% at V =-4 V Vds=30 at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.",

keywords = "GaN, High electron mobility transistors (HEMTs), Implantation, Power density, Pulsed I-V, Transient",

author = "Shiu, {Jin Yu} and Huang, {Jui Chien} and Vincent Desmaris and Chang, {Chia Ta} and Lu, {Chung Yu} and Kazuhide Kumakura and Toshiki Makimoto and Herbert Zirath and Niklas Rorsman and Chang, {Edward Yi}",

note = "Funding Information: Manuscript received January 22, 2007; revised April 2, 2007. This work was supported in part by the Ministry of Education, by the Ministry of Economic Affairs, and by the National Science Council of China under Contract NSC 94-2752-E-009-001-PAE and Contract 94-EC-17-A-05-S1-020. The review of this letter was arranged by Editor J. del Alamo.",

year = "2007",

month = jun,

doi = "10.1109/LED.2007.896904",

language = "English",

volume = "28",

pages = "476--478",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs

AU - Shiu, Jin Yu

AU - Huang, Jui Chien

AU - Desmaris, Vincent

AU - Chang, Chia Ta

AU - Lu, Chung Yu

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Zirath, Herbert

AU - Rorsman, Niklas

AU - Chang, Edward Yi

N1 - Funding Information: Manuscript received January 22, 2007; revised April 2, 2007. This work was supported in part by the Ministry of Education, by the Ministry of Economic Affairs, and by the National Science Council of China under Contract NSC 94-2752-E-009-001-PAE and Contract 94-EC-17-A-05-S1-020. The review of this letter was arranged by Editor J. del Alamo.

PY - 2007/6

Y1 - 2007/6

N2 - A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V = Vds=50 and a maximum power added efficiency of 51.5% at V =-4 V Vds=30 at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.

AB - A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V = Vds=50 and a maximum power added efficiency of 51.5% at V =-4 V Vds=30 at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.

KW - GaN

KW - High electron mobility transistors (HEMTs)

KW - Implantation

KW - Power density

KW - Pulsed I-V

KW - Transient

UR - http://www.scopus.com/inward/record.url?scp=34249822479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249822479&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.896904

DO - 10.1109/LED.2007.896904

M3 - Article

AN - SCOPUS:34249822479

SN - 0741-3106

VL - 28

SP - 476

EP - 478

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs

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Keywords

ASJC Scopus subject areas

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