Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa

    Research output: Contribution to journalArticle


    Three-terminal structures have an advantage over two-terminal structures in logic applications and neuromorphic circuits, However, three-terminal operation based on Valence Change RAM still requires a larger gate bias to form/dissolve a conductive path between the source and the drain, especially for turning off. Here, reduction in gate bias and gate leakage current in nonvolatile operation of oxygen vacancy drift-controlled three-terminal ReRAM is demonstrated by W/Ti (gate)/TaOx (resistance switching layer)/Pt (source), Pt (drain) structure. Introduction of a Ti thin layer between W and TaOx layers prevents a conductive channel formation between gate and source/drain electrodes. Consequently, as-fabricated high resistance between gate and source/drain is kept, resulting in smaller gate leakage current. We also achieved interface engineering on a sidewall structure of Pt (source)/SiO2 (insulator)/Pt (drain) multi-layer, reducing in an operating bias from 10 V to 4 V or less.

    Original languageEnglish
    Pages (from-to)30-34
    Number of pages5
    JournalSolid State Ionics
    Publication statusPublished - 2018 Dec 15



    • Atomic switch
    • Oxygen vacancy
    • Redox
    • ReRAM
    • Resistive switching
    • Three terminal

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics

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