Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Qi Wang*, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

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