Ozone cleaning of carbon-related contaminants on Si wafers and other substrate materials

H. Nonaka, A. Kurokawa, Shingo Ichimura, D. W. Moon

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We have investigated a novel surface cleaning technique of native oxide on Si wafer, in which carbon-related contaminants are removed effectively at room temperature with a pure ozone beam from an ozone jet generator that we developed. Although ozone alone was likely to be little reactive to saturated carbons and byproducts in the reaction of ozone with unsaturated carbons which could be assigned to either carbonyl- or carboxyl-related compounds, a high-dose pure ozone under ultraviolet light irradiation to generate atomic oxygen by the photo-dissociation of ozone removed most of them at room temperature. The effectiveness of the ozone cleaning was also demonstrated for selected oxide surfaces.

Original languageEnglish
Pages (from-to)493-498
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume477
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1997 Mar 311997 Apr 3

Fingerprint

Ozone
cleaning
ozone
contaminants
Cleaning
Carbon
wafers
Impurities
carbon
Substrates
Oxides
Photodissociation
Surface cleaning
oxides
room temperature
ultraviolet radiation
photodissociation
Dosimetry
Byproducts
generators

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ozone cleaning of carbon-related contaminants on Si wafers and other substrate materials. / Nonaka, H.; Kurokawa, A.; Ichimura, Shingo; Moon, D. W.

In: Materials Research Society Symposium - Proceedings, Vol. 477, 01.01.1997, p. 493-498.

Research output: Contribution to journalConference article

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