Ozone-treated channel diamond field-effect transistors

Toshikatsu Sakai, Kwan Soup Song, Hirofumi Kanazawa, Yusuke Nakamura, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    46 Citations (Scopus)

    Abstract

    Diamond field-effect transistors (FETs) whose channel is partially oxidized and highly resistive are fabricated by ozone treatment. These FETs are operated in electrolyte solutions. From XPS analyses, it is evident that hydrogen-terminated (H-terminated) diamond is partially oxygen-terminated (O-terminated) by ozone treatment. The quantification of surface oxygen in ozone-treated diamond is carried out. The quantification shows that the surface oxygen increases with an increase in ozone treatment time indicating the control of oxygen coverage. The partially O-terminated diamond surface channel is much less conductive compared with the H-terminated diamond. The ozone-treated FETs were operated stably even though the channel of the FETs becomes highly resistive. For the sensing of particular ions or molecules by the immobilization of sensing components, the control of surface termination is necessary.

    Original languageEnglish
    Pages (from-to)1971-1975
    Number of pages5
    JournalDiamond and Related Materials
    Volume12
    Issue number10-11
    DOIs
    Publication statusPublished - 2003 Oct

    Fingerprint

    Diamond
    Ozone
    Field effect transistors
    ozone
    Diamonds
    field effect transistors
    diamonds
    Oxygen
    oxygen
    Hydrogen
    hydrogen
    immobilization
    Electrolytes
    X ray photoelectron spectroscopy
    electrolytes
    Ions
    Molecules
    molecules
    ions

    Keywords

    • Diamond
    • FET
    • H-termination
    • O-termination
    • Ozone treatment

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Sakai, T., Song, K. S., Kanazawa, H., Nakamura, Y., Umezawa, H., Tachiki, M., & Kawarada, H. (2003). Ozone-treated channel diamond field-effect transistors. Diamond and Related Materials, 12(10-11), 1971-1975. https://doi.org/10.1016/S0925-9635(03)00277-2

    Ozone-treated channel diamond field-effect transistors. / Sakai, Toshikatsu; Song, Kwan Soup; Kanazawa, Hirofumi; Nakamura, Yusuke; Umezawa, Hitoshi; Tachiki, Minoru; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 12, No. 10-11, 10.2003, p. 1971-1975.

    Research output: Contribution to journalArticle

    Sakai, T, Song, KS, Kanazawa, H, Nakamura, Y, Umezawa, H, Tachiki, M & Kawarada, H 2003, 'Ozone-treated channel diamond field-effect transistors', Diamond and Related Materials, vol. 12, no. 10-11, pp. 1971-1975. https://doi.org/10.1016/S0925-9635(03)00277-2
    Sakai T, Song KS, Kanazawa H, Nakamura Y, Umezawa H, Tachiki M et al. Ozone-treated channel diamond field-effect transistors. Diamond and Related Materials. 2003 Oct;12(10-11):1971-1975. https://doi.org/10.1016/S0925-9635(03)00277-2
    Sakai, Toshikatsu ; Song, Kwan Soup ; Kanazawa, Hirofumi ; Nakamura, Yusuke ; Umezawa, Hitoshi ; Tachiki, Minoru ; Kawarada, Hiroshi. / Ozone-treated channel diamond field-effect transistors. In: Diamond and Related Materials. 2003 ; Vol. 12, No. 10-11. pp. 1971-1975.
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