P-i-n homojunction in organic light-emitting transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Kosuke Sawabe, Satoshi Tsuda, Yohei Yomogida, Takeshi Yamao, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

    Research output: Contribution to journalArticle

    61 Citations (Scopus)

    Abstract

    A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

    Original languageEnglish
    Pages (from-to)2753-2758
    Number of pages6
    JournalAdvanced Materials
    Volume23
    Issue number24
    DOIs
    Publication statusPublished - 2011 Jun 24

    Keywords

    • Doping
    • Electronic Mechanism
    • Organic Electronics
    • Organic Field-Effect Transistors
    • Transistor

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

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  • Cite this

    Bisri, S. Z., Takenobu, T., Sawabe, K., Tsuda, S., Yomogida, Y., Yamao, T., Hotta, S., Adachi, C., & Iwasa, Y. (2011). P-i-n homojunction in organic light-emitting transistors. Advanced Materials, 23(24), 2753-2758. https://doi.org/10.1002/adma.201004572