p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura, Toshio Nishida, Naoki Kobayashi

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

p-InGaN/n-GaN heterojunction diodes were grown by metalorganic vapor phase epitaxy and characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements. We changed the In mole fraction in p-InGaN from 0 to 25% to investigate diode characteristics. All the diodes showed rectified I-V characteristics at room temperature. The ideality factors obtained from forward I-V characteristics were around 2, meaning that the recombination current is dominant instead of the tunneling current through the defects in depletion layers of the diodes. The breakdown voltage in reverse I-V characteristics depends on the net donor concentration (ND - NA) in n-GaN instead of the In mole fraction in p-InGaN. This result also means that the defects in p-InGaN do not influence the breakdown voltage. The built-in potential from C-V measurements decreases with the In mole fraction in p-InGaN, meaning that the valence band discontinuity increases with the In mole fraction. This valence band discontinuity realizes the hole confinement in an HBT with an p-InGaN base. Using these InGaN/GaN heterojunction diodes, an InGaN/GaN double heterojunction bipolar transistor was fabricated for the first time. The maximum current gain of 1.2 was obtained at room temperature.

Original languageEnglish
Pages (from-to)G13.10.1-G13.10.11
JournalMaterials Research Society Symposium - Proceedings
Volume639
Publication statusPublished - 2001 Dec 1
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: 2000 Nov 272000 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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