p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura, Toshio Nishida, Naoki Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

p-InGaN/n-GaN heterojunction diodes were grown by metalorganic vapor phase epitaxy and characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements. We changed the In mole fraction in p-InGaN from 0 to 25% to investigate diode characteristics. All the diodes showed rectified I-V characteristics at room temperature. The ideality factors obtained from forward I-V characteristics were around 2, meaning that the recombination current is dominant instead of the tunneling current through the defects in depletion layers of the diodes. The breakdown voltage in reverse I-V characteristics depends on the net donor concentration (N D - N A) in n-GaN instead of the In mole fraction in p-InGaN. This result also means that the defects in p-InGaN do not influence the breakdown voltage. The built-in potential from C-V measurements decreases with the In mole fraction in p-InGaN, meaning that the valence band discontinuity increases with the In mole fraction. This valence band discontinuity realizes the hole confinement in an HBT with an p-InGaN base. Using these InGaN/GaN heterojunction diodes, an InGaN/GaN double heterojunction bipolar transistor was fabricated for the first time. The maximum current gain of 1.2 was obtained at room temperature.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC Wetzel, M Shur, U Mishra, B Gil, K Kishino
Volume639
Publication statusPublished - 2001
Externally publishedYes
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: 2000 Nov 272000 Dec 1

Other

OtherGaN and Related Alloys 2000
CountryUnited States
CityBoston, MA
Period00/11/2700/12/1

Fingerprint

Heterojunction bipolar transistors
Heterojunctions
Diodes
Capacitance measurement
Voltage measurement
Valence bands
Electric breakdown
Defects
Metallorganic vapor phase epitaxy
Temperature
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Makimoto, T., Kumakura, K., Nishida, T., & Kobayashi, N. (2001). p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors. In C. Wetzel, M. Shur, U. Mishra, B. Gil, & K. Kishino (Eds.), Materials Research Society Symposium - Proceedings (Vol. 639)

p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors. / Makimoto, Toshiki; Kumakura, Kazuhide; Nishida, Toshio; Kobayashi, Naoki.

Materials Research Society Symposium - Proceedings. ed. / C Wetzel; M Shur; U Mishra; B Gil; K Kishino. Vol. 639 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Makimoto, T, Kumakura, K, Nishida, T & Kobayashi, N 2001, p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors. in C Wetzel, M Shur, U Mishra, B Gil & K Kishino (eds), Materials Research Society Symposium - Proceedings. vol. 639, GaN and Related Alloys 2000, Boston, MA, United States, 00/11/27.
Makimoto T, Kumakura K, Nishida T, Kobayashi N. p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors. In Wetzel C, Shur M, Mishra U, Gil B, Kishino K, editors, Materials Research Society Symposium - Proceedings. Vol. 639. 2001
Makimoto, Toshiki ; Kumakura, Kazuhide ; Nishida, Toshio ; Kobayashi, Naoki. / p-InGaN/n-GaN heterojunction diodes and their application to heterojunction bipolar transistors. Materials Research Society Symposium - Proceedings. editor / C Wetzel ; M Shur ; U Mishra ; B Gil ; K Kishino. Vol. 639 2001.
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abstract = "p-InGaN/n-GaN heterojunction diodes were grown by metalorganic vapor phase epitaxy and characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements. We changed the In mole fraction in p-InGaN from 0 to 25{\%} to investigate diode characteristics. All the diodes showed rectified I-V characteristics at room temperature. The ideality factors obtained from forward I-V characteristics were around 2, meaning that the recombination current is dominant instead of the tunneling current through the defects in depletion layers of the diodes. The breakdown voltage in reverse I-V characteristics depends on the net donor concentration (N D - N A) in n-GaN instead of the In mole fraction in p-InGaN. This result also means that the defects in p-InGaN do not influence the breakdown voltage. The built-in potential from C-V measurements decreases with the In mole fraction in p-InGaN, meaning that the valence band discontinuity increases with the In mole fraction. This valence band discontinuity realizes the hole confinement in an HBT with an p-InGaN base. Using these InGaN/GaN heterojunction diodes, an InGaN/GaN double heterojunction bipolar transistor was fabricated for the first time. The maximum current gain of 1.2 was obtained at room temperature.",
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AU - Makimoto, Toshiki

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AU - Kobayashi, Naoki

PY - 2001

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N2 - p-InGaN/n-GaN heterojunction diodes were grown by metalorganic vapor phase epitaxy and characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements. We changed the In mole fraction in p-InGaN from 0 to 25% to investigate diode characteristics. All the diodes showed rectified I-V characteristics at room temperature. The ideality factors obtained from forward I-V characteristics were around 2, meaning that the recombination current is dominant instead of the tunneling current through the defects in depletion layers of the diodes. The breakdown voltage in reverse I-V characteristics depends on the net donor concentration (N D - N A) in n-GaN instead of the In mole fraction in p-InGaN. This result also means that the defects in p-InGaN do not influence the breakdown voltage. The built-in potential from C-V measurements decreases with the In mole fraction in p-InGaN, meaning that the valence band discontinuity increases with the In mole fraction. This valence band discontinuity realizes the hole confinement in an HBT with an p-InGaN base. Using these InGaN/GaN heterojunction diodes, an InGaN/GaN double heterojunction bipolar transistor was fabricated for the first time. The maximum current gain of 1.2 was obtained at room temperature.

AB - p-InGaN/n-GaN heterojunction diodes were grown by metalorganic vapor phase epitaxy and characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements. We changed the In mole fraction in p-InGaN from 0 to 25% to investigate diode characteristics. All the diodes showed rectified I-V characteristics at room temperature. The ideality factors obtained from forward I-V characteristics were around 2, meaning that the recombination current is dominant instead of the tunneling current through the defects in depletion layers of the diodes. The breakdown voltage in reverse I-V characteristics depends on the net donor concentration (N D - N A) in n-GaN instead of the In mole fraction in p-InGaN. This result also means that the defects in p-InGaN do not influence the breakdown voltage. The built-in potential from C-V measurements decreases with the In mole fraction in p-InGaN, meaning that the valence band discontinuity increases with the In mole fraction. This valence band discontinuity realizes the hole confinement in an HBT with an p-InGaN base. Using these InGaN/GaN heterojunction diodes, an InGaN/GaN double heterojunction bipolar transistor was fabricated for the first time. The maximum current gain of 1.2 was obtained at room temperature.

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