P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications

Atsushi Nishikawa; Kazuhide Kumakura; Tetsuya Akasaka; Toshiki Makimoto

doi:10.1143/JJAP.45.3387

P-InGaN/n-GaN vertical conducting diodes on n⁺-SiC substrate for high power electronic device applications

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n⁺-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (V_B) of 250V was obtained with a low on-state resistance (R _on) of 1.28mΩcm² when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (V_B) ²/R_on, of 49 MW/cm². With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

Original language	English
Pages (from-to)	3387-3390
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3387
Publication status	Published - 2006 Apr 25

Keywords

Breakdown voltage
InGaN/GaN
N-SiC
On-state resistance
Vertical conducting structure

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Nishikawa, A., Kumakura, K., Akasaka, T., & Makimoto, T. (2006). P-InGaN/n-GaN vertical conducting diodes on n⁺-SiC substrate for high power electronic device applications. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 B), 3387-3390. https://doi.org/10.1143/JJAP.45.3387

P-InGaN/n-GaN vertical conducting diodes on n⁺-SiC substrate for high power electronic device applications. / Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya; Makimoto, Toshiki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3387-3390.

Research output: Contribution to journal › Article

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title = "P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications",

abstract = "We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.",

keywords = "Breakdown voltage, InGaN/GaN, N-SiC, On-state resistance, Vertical conducting structure",

author = "Atsushi Nishikawa and Kazuhide Kumakura and Tetsuya Akasaka and Toshiki Makimoto",

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AU - Akasaka, Tetsuya

AU - Makimoto, Toshiki

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N2 - We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

AB - We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

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KW - N-SiC

KW - On-state resistance

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