Abstract
We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.
| Original language | English |
|---|---|
| Pages (from-to) | 3387-3390 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2006 Apr 25 |
| Externally published | Yes |
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Keywords
- Breakdown voltage
- InGaN/GaN
- N-SiC
- On-state resistance
- Vertical conducting structure
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications. / Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya; Makimoto, Toshiki.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3387-3390.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications
AU - Nishikawa, Atsushi
AU - Kumakura, Kazuhide
AU - Akasaka, Tetsuya
AU - Makimoto, Toshiki
PY - 2006/4/25
Y1 - 2006/4/25
N2 - We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.
AB - We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.
KW - Breakdown voltage
KW - InGaN/GaN
KW - N-SiC
KW - On-state resistance
KW - Vertical conducting structure
UR - http://www.scopus.com/inward/record.url?scp=33646897325&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646897325&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.3387
DO - 10.1143/JJAP.45.3387
M3 - Article
AN - SCOPUS:33646897325
VL - 45
SP - 3387
EP - 3390
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -