P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications

Atsushi Nishikawa; Kazuhide Kumakura; Tetsuya Akasaka; Toshiki Makimoto

doi:10.1143/JJAP.45.3387

P-InGaN/n-GaN vertical conducting diodes on n⁺-SiC substrate for high power electronic device applications

Atsushi Nishikawa^*, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n⁺-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (V_B) of 250V was obtained with a low on-state resistance (R _on) of 1.28mΩcm² when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (V_B) ²/R_on, of 49 MW/cm². With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

Original language	English
Pages (from-to)	3387-3390
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3387
Publication status	Published - 2006 Apr 25
Externally published	Yes

Keywords

Breakdown voltage
InGaN/GaN
N-SiC
On-state resistance
Vertical conducting structure

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.3387

Cite this

P-InGaN/n-GaN vertical conducting diodes on n⁺-SiC substrate for high power electronic device applications. / Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya; Makimoto, Toshiki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3387-3390.

Research output: Contribution to journal › Article › peer-review

@article{66b973300c054ba182332330aacef2e9,

title = "P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications",

abstract = "We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.",

keywords = "Breakdown voltage, InGaN/GaN, N-SiC, On-state resistance, Vertical conducting structure",

author = "Atsushi Nishikawa and Kazuhide Kumakura and Tetsuya Akasaka and Toshiki Makimoto",

year = "2006",

month = apr,

day = "25",

doi = "10.1143/JJAP.45.3387",

language = "English",

volume = "45",

pages = "3387--3390",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications

AU - Nishikawa, Atsushi

AU - Kumakura, Kazuhide

AU - Akasaka, Tetsuya

AU - Makimoto, Toshiki

PY - 2006/4/25

Y1 - 2006/4/25

N2 - We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

AB - We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

KW - Breakdown voltage

KW - InGaN/GaN

KW - N-SiC

KW - On-state resistance

KW - Vertical conducting structure

UR - http://www.scopus.com/inward/record.url?scp=33646897325&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646897325&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.3387

DO - 10.1143/JJAP.45.3387

M3 - Article

AN - SCOPUS:33646897325

VL - 45

SP - 3387

EP - 3390

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -