P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications

Atsushi Nishikawa*, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

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Engineering & Materials Science

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