P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon

Takashi Kobayashi, Simpei Iijima, Atsushi Hiraiwa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In situ boron-doped Si films are deposited in an amorphous state using Si2H6 and B2H6. By addition of B2H6, deposition at temperatures as low as 300°C is made possible with a sufficient deposition rate. In addition, the films show excellent step coverage. Resistivity of the films is fully reduced even after annealing at 650°C, which results from grain growth and dopant activation at low temperatures.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume32
Issue number5 A
Publication statusPublished - 1993 May 1
Externally publishedYes

Fingerprint

Amorphous silicon
Polysilicon
amorphous silicon
Boron
boron
Processing
Deposition rates
Grain growth
Temperature
temperature
Chemical activation
Doping (additives)
activation
Annealing
electrical resistivity
annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon. / Kobayashi, Takashi; Iijima, Simpei; Hiraiwa, Atsushi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 32, No. 5 A, 01.05.1993.

Research output: Contribution to journalArticle

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