P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon

Takashi Kobayashi, Simpei Iijima, Atsushi Hiraiwa

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In situ boron-doped Si films are deposited in an amorphous state using Si2H6 and B2H6. By addition of B2H6, deposition at temperatures as low as 300°C is made possible with a sufficient deposition rate. In addition, the films show excellent step coverage. Resistivity of the films is fully reduced even after annealing at 650°C, which results from grain growth and dopant activation at low temperatures.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number5 A
Publication statusPublished - 1993 May 1
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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