TY - JOUR
T1 - Parallel programmable nonvolatile memory using ordinary static random access memory cells
AU - Mizutani, Tomoko
AU - Takeuchi, Kiyoshi
AU - Saraya, Takuya
AU - Shinohara, Hirofumi
AU - Kobayashi, Masaharu
AU - Hiramoto, Toshiro
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/4
Y1 - 2017/4
N2 - A technique of using an ordinary static random access memory (SRAM) array for a programmable nonvolatile (NV) memory is proposed. The parallel NV writing of the entire array is achieved by simply applying high-voltage stress to the power supply terminal, after storing inverted desired data in the static random access memory (SRAM) array. Successful 2 kbit NV writing is demonstrated using a device-matrix-array (DMA) test element group (TEG) fabricated by 0.18μm technology.
AB - A technique of using an ordinary static random access memory (SRAM) array for a programmable nonvolatile (NV) memory is proposed. The parallel NV writing of the entire array is achieved by simply applying high-voltage stress to the power supply terminal, after storing inverted desired data in the static random access memory (SRAM) array. Successful 2 kbit NV writing is demonstrated using a device-matrix-array (DMA) test element group (TEG) fabricated by 0.18μm technology.
UR - http://www.scopus.com/inward/record.url?scp=85017158885&partnerID=8YFLogxK
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U2 - 10.7567/JJAP.56.04CD17
DO - 10.7567/JJAP.56.04CD17
M3 - Article
AN - SCOPUS:85017158885
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4
M1 - 04CD17
ER -