Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

H. Nishikawa, R. Nakamura, R. Tohmon, Yoshimichi Ohki, Y. Hama, Y. Sakurai, K. Nagasawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10 16/cm 3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O 2 - ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O 2 and H 2O.

    Original languageEnglish
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    EditorsAlexander J.III. Marker
    PublisherPubl by Int Soc for Optical Engineering
    Pages69-78
    Number of pages10
    Volume1327
    Publication statusPublished - 1990
    EventProperties and Characteristics of Optical Glass II - San Diego, CA, USA
    Duration: 1990 Jul 121990 Jul 13

    Other

    OtherProperties and Characteristics of Optical Glass II
    CitySan Diego, CA, USA
    Period90/7/1290/7/13

    Fingerprint

    silica glass
    Excimer lasers
    Laser beam effects
    Fused silica
    excimer lasers
    purity
    irradiation
    Oxygen
    oxygen
    Stoichiometry
    stoichiometry
    Silica
    Irradiation
    Annealing
    Impurities
    silicon dioxide
    impurities
    Defects
    annealing
    defects

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics

    Cite this

    Nishikawa, H., Nakamura, R., Tohmon, R., Ohki, Y., Hama, Y., Sakurai, Y., & Nagasawa, K. (1990). Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. In A. J. III. Marker (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1327, pp. 69-78). Publ by Int Soc for Optical Engineering.

    Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. / Nishikawa, H.; Nakamura, R.; Tohmon, R.; Ohki, Yoshimichi; Hama, Y.; Sakurai, Y.; Nagasawa, K.

    Proceedings of SPIE - The International Society for Optical Engineering. ed. / Alexander J.III. Marker. Vol. 1327 Publ by Int Soc for Optical Engineering, 1990. p. 69-78.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Nishikawa, H, Nakamura, R, Tohmon, R, Ohki, Y, Hama, Y, Sakurai, Y & Nagasawa, K 1990, Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. in AJIII Marker (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1327, Publ by Int Soc for Optical Engineering, pp. 69-78, Properties and Characteristics of Optical Glass II, San Diego, CA, USA, 90/7/12.
    Nishikawa H, Nakamura R, Tohmon R, Ohki Y, Hama Y, Sakurai Y et al. Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. In Marker AJIII, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1327. Publ by Int Soc for Optical Engineering. 1990. p. 69-78
    Nishikawa, H. ; Nakamura, R. ; Tohmon, R. ; Ohki, Yoshimichi ; Hama, Y. ; Sakurai, Y. ; Nagasawa, K. / Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. Proceedings of SPIE - The International Society for Optical Engineering. editor / Alexander J.III. Marker. Vol. 1327 Publ by Int Soc for Optical Engineering, 1990. pp. 69-78
    @inproceedings{63f97d365e844efaa57b8baccc152c46,
    title = "Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses",
    abstract = "High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10 16/cm 3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O 2 - ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O 2 and H 2O.",
    author = "H. Nishikawa and R. Nakamura and R. Tohmon and Yoshimichi Ohki and Y. Hama and Y. Sakurai and K. Nagasawa",
    year = "1990",
    language = "English",
    volume = "1327",
    pages = "69--78",
    editor = "Marker, {Alexander J.III.}",
    booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
    publisher = "Publ by Int Soc for Optical Engineering",

    }

    TY - GEN

    T1 - Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

    AU - Nishikawa, H.

    AU - Nakamura, R.

    AU - Tohmon, R.

    AU - Ohki, Yoshimichi

    AU - Hama, Y.

    AU - Sakurai, Y.

    AU - Nagasawa, K.

    PY - 1990

    Y1 - 1990

    N2 - High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10 16/cm 3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O 2 - ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O 2 and H 2O.

    AB - High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10 16/cm 3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O 2 - ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O 2 and H 2O.

    UR - http://www.scopus.com/inward/record.url?scp=0025539363&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0025539363&partnerID=8YFLogxK

    M3 - Conference contribution

    VL - 1327

    SP - 69

    EP - 78

    BT - Proceedings of SPIE - The International Society for Optical Engineering

    A2 - Marker, Alexander J.III.

    PB - Publ by Int Soc for Optical Engineering

    ER -