PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM.

Hirofumi Shinohara, K. Anami, M. Yoshimoto, Y. Hirata, T. Nakano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)
Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherBusiness Cent for Academic Soc Japan
Pages106-107
Number of pages2
Publication statusPublished - 1982
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shinohara, H., Anami, K., Yoshimoto, M., Hirata, Y., & Nakano, T. (1982). PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 106-107). Business Cent for Academic Soc Japan.

PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM. / Shinohara, Hirofumi; Anami, K.; Yoshimoto, M.; Hirata, Y.; Nakano, T.

Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, 1982. p. 106-107.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shinohara, H, Anami, K, Yoshimoto, M, Hirata, Y & Nakano, T 1982, PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM. in Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, pp. 106-107.
Shinohara H, Anami K, Yoshimoto M, Hirata Y, Nakano T. PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM. In Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan. 1982. p. 106-107
Shinohara, Hirofumi ; Anami, K. ; Yoshimoto, M. ; Hirata, Y. ; Nakano, T. / PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM. Digest of Technical Papers - Symposium on VLSI Technology. Business Cent for Academic Soc Japan, 1982. pp. 106-107
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