PATTERN EDGE PROFILE SIMULATION FOR OBLIQUE ION MILLING.

Noriyoshi Yamauchi, Toshiaki Yachi, Tsutomu Wada

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

An oblique ion milling simulation method is proposed in which etching and redeposition at the pattern side wall are taken into account. The effective etching rate at the pattern side wall is determined as the difference between the etching rate given by the angular dependency and the redeposition rate. The redeposition rate is assumed to be proportional to the etching rate of the material to be etched at the flat surface. A pattern edge profile simulation is carried out for an oblique ion milling of silicon. The simulation results agreed well with the experimental results with a relatively large ion beam incident angle.

Original languageEnglish
Pages (from-to)1552-1557
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume2
Issue number4
DOIs
Publication statusPublished - 1984 Oct
Externally publishedYes

Fingerprint

Etching
Ions
etching
profiles
ions
simulation
Silicon
Heavy ions
Ion beams
flat surfaces
ion beams
silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

PATTERN EDGE PROFILE SIMULATION FOR OBLIQUE ION MILLING. / Yamauchi, Noriyoshi; Yachi, Toshiaki; Wada, Tsutomu.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 2, No. 4, 10.1984, p. 1552-1557.

Research output: Contribution to journalArticle

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