Performance enhancement of semiconductor devices by control of discrete dopant distribution

M. Hori, T. Shinada, K. Taira, N. Shimamoto, Takashi Tanii, T. Endo, I. Ohdomari

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    As semiconductor devices are scaled down to the nanometre level, random dopant fluctuation in the conducting channel caused by the small number of dopant atoms will significantly affect device performance. We fabricated semiconductor devices with random discrete dopant distribution in the drain side and then evaluated how well we could control the drain current of the devices. The results showed that the drain current in devices with the dopant distribution in the drain side was several per cent higher than that in devices with the dopant distribution in the source side. We believe that this increase in current is caused by the suppression of injection velocity degradation in the source side. The capability to control the location of individual dopant atoms enhances drain current and, therefore, the performance of nanodevices. Accurately controlling both the amount and the positioning of dopant atoms is critical for the advancement of true nanoelectronics.

    Original languageEnglish
    Article number365205
    JournalNanotechnology
    Volume20
    Issue number36
    DOIs
    Publication statusPublished - 2009 Sep 9

    Fingerprint

    Semiconductor devices
    Doping (additives)
    Drain current
    Atoms
    Nanoelectronics
    Degradation

    ASJC Scopus subject areas

    • Bioengineering
    • Chemistry(all)
    • Electrical and Electronic Engineering
    • Mechanical Engineering
    • Mechanics of Materials
    • Materials Science(all)

    Cite this

    Performance enhancement of semiconductor devices by control of discrete dopant distribution. / Hori, M.; Shinada, T.; Taira, K.; Shimamoto, N.; Tanii, Takashi; Endo, T.; Ohdomari, I.

    In: Nanotechnology, Vol. 20, No. 36, 365205, 09.09.2009.

    Research output: Contribution to journalArticle

    Hori, M. ; Shinada, T. ; Taira, K. ; Shimamoto, N. ; Tanii, Takashi ; Endo, T. ; Ohdomari, I. / Performance enhancement of semiconductor devices by control of discrete dopant distribution. In: Nanotechnology. 2009 ; Vol. 20, No. 36.
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    AU - Endo, T.

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