An all-optical AND gate using photonic-crystal quantum dot semiconductor optical amplifiers is designed and its performance is evaluated. The input–output characteristics of the gate are simulated using a rate equation model and it is found that the gate can achieve a maximum of ∼9 dB extinction ratio at 160 Gb/s. The proposed gate is compared with quantum dot semiconductor optical amplifiers AND gate to evaluate its effectiveness with regard to signal quality, device size, and power consumption.
ASJC Scopus subject areas
- Electrical and Electronic Engineering