Perpendicular recording characteristics and microstructure for electroless plated CoNiReP flexible disks with a NiMoP underlayer

H. Matsubara, H. Mizutani, S. Mitamura, Tetsuya Osaka, F. Goto

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Two kinds of electroless-plated CoNiReP/NiMoP flexible disks were investigated from the viewpoint of forming a perpendicular recording medium containing an initial in-plane layer. A well-oriented hcp phase aligned with the c-axis normal to the film plane grew spontaneously in the perpendicularly anisotropic layer after deposition of the in-plane initial layer, which was composed of an fcc phase. In-plane coercivities of the in-plane anisotropic initial layers of 50 and 85 Oe were obtained by changing the bath factor of the NiSO4 concentration to 0.10 and 0.06 mol-dm-3, respectively. Although the switching mechanism of the CoNiReP film had been clarified as a rotation, that of both in-plane anisotropic initial layers was dominated by wall motion. The reproduced voltage of the medium with the 50-Oe in-plane layer was higher than that of the medium with the 85-Oe in-plane layer. A medium with a quasi-soft magnetic in-plane anisotropic initial layer showed excellent recording characteristics when used with ring-type heads.

Original languageEnglish
Pages (from-to)3018-3020
Number of pages3
JournalIEEE Transactions on Magnetics
Volume24
Issue number6
DOIs
Publication statusPublished - 1988 Nov

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recording
microstructure
Microstructure
Coercive force
Electric potential
coercivity
baths
rings
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Perpendicular recording characteristics and microstructure for electroless plated CoNiReP flexible disks with a NiMoP underlayer. / Matsubara, H.; Mizutani, H.; Mitamura, S.; Osaka, Tetsuya; Goto, F.

In: IEEE Transactions on Magnetics, Vol. 24, No. 6, 11.1988, p. 3018-3020.

Research output: Contribution to journalArticle

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