pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors

Shuto Kawaguchi; Reona Nomoto; Hirotaka Sato; Teruaki Takarada; Yu Hao Chang; Hiroshi Kawarada

doi:10.3390/s22051807

pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors

Shuto Kawaguchi^*, Reona Nomoto, Hirotaka Sato, Teruaki Takarada, Yu Hao Chang, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95^◦ C. At 80^◦ C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80^◦ C by combining it with a highly pH sensitive stainless-steel vessel.

Original language	English
Article number	1807
Journal	Sensors
Volume	22
Issue number	5
DOIs	https://doi.org/10.3390/s22051807
Publication status	Published - 2022 Mar 1

Keywords

Boron-doped diamond
Diamond solution gate field effect transistor
High temperature
PH insensitive
Stainless-steel vessel

ASJC Scopus subject areas

Analytical Chemistry
Information Systems
Atomic and Molecular Physics, and Optics
Biochemistry
Instrumentation
Electrical and Electronic Engineering

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10.3390/s22051807

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@article{98a92b2335b24fe7a8effd00e98cfada,

title = "pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors",

abstract = "Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95◦ C. At 80◦ C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80◦ C by combining it with a highly pH sensitive stainless-steel vessel.",

keywords = "Boron-doped diamond, Diamond solution gate field effect transistor, High temperature, PH insensitive, Stainless-steel vessel",

author = "Shuto Kawaguchi and Reona Nomoto and Hirotaka Sato and Teruaki Takarada and Chang, {Yu Hao} and Hiroshi Kawarada",

note = "Funding Information: The authors appreciate the assistance of Nano Technology Research Center (NTRC) of Waseda University for the use of their equipment. Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = mar,

day = "1",

doi = "10.3390/s22051807",

language = "English",

volume = "22",

journal = "Sensors (Switzerland)",

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T1 - pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors

AU - Kawaguchi, Shuto

AU - Nomoto, Reona

AU - Sato, Hirotaka

AU - Takarada, Teruaki

AU - Chang, Yu Hao

AU - Kawarada, Hiroshi

N1 - Funding Information: The authors appreciate the assistance of Nano Technology Research Center (NTRC) of Waseda University for the use of their equipment. Publisher Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2022/3/1

Y1 - 2022/3/1

N2 - Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95◦ C. At 80◦ C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80◦ C by combining it with a highly pH sensitive stainless-steel vessel.

AB - Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95◦ C. At 80◦ C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80◦ C by combining it with a highly pH sensitive stainless-steel vessel.

KW - Boron-doped diamond

KW - Diamond solution gate field effect transistor

KW - High temperature

KW - PH insensitive

KW - Stainless-steel vessel

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DO - 10.3390/s22051807

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JO - Sensors (Switzerland)

JF - Sensors (Switzerland)

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ER -

pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors

Abstract

Keywords

ASJC Scopus subject areas

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