Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

Ko Okajima, Kyozaburo Takeda, Norihisa Oyama, Eiji Ohta, Kenji Shiraishi, Takahisa Ohno

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume39
    Issue number9 A/B
    Publication statusPublished - 2000 Sep 15

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    Semiconductor growth
    Dislocations (crystals)
    Epitaxial growth
    Semiconductor materials

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations. / Okajima, Ko; Takeda, Kyozaburo; Oyama, Norihisa; Ohta, Eiji; Shiraishi, Kenji; Ohno, Takahisa.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 39, No. 9 A/B, 15.09.2000.

    Research output: Contribution to journalArticle

    Okajima, Ko ; Takeda, Kyozaburo ; Oyama, Norihisa ; Ohta, Eiji ; Shiraishi, Kenji ; Ohno, Takahisa. / Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations. In: Japanese Journal of Applied Physics, Part 2: Letters. 2000 ; Vol. 39, No. 9 A/B.
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    AU - Shiraishi, Kenji

    AU - Ohno, Takahisa

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