TY - JOUR
T1 - Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations
AU - Okajima, Ko
AU - Takeda, Kyozaburo
AU - Oyama, Norihisa
AU - Ohta, Eiji
AU - Shiraishi, Kenji
AU - Ohno, Takahisa
PY - 2000/9/15
Y1 - 2000/9/15
N2 - We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
AB - We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
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U2 - 10.1143/jjap.39.l917
DO - 10.1143/jjap.39.l917
M3 - Article
AN - SCOPUS:0034269228
SN - 0021-4922
VL - 39
SP - L917-L920
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9 A/B
ER -