Phonon attenuation in heavily doped many-valley semiconductors

T. Sota*, K. Suzuki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for q<or approximately=2kF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.

Original languageEnglish
Article number012
Pages (from-to)6991-7002
Number of pages12
JournalJournal of Physics C: Solid State Physics
Issue number34
Publication statusPublished - 1982 Dec 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Engineering(all)
  • Physics and Astronomy(all)


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