Phonon attenuation in heavily doped many-valley semiconductors

Takayuki Sota, K. Suzuki

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for q<or approximately=2kF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.

    Original languageEnglish
    Article number012
    Pages (from-to)6991-7002
    Number of pages12
    JournalJournal of Physics C: Solid State Physics
    Volume15
    Issue number34
    DOIs
    Publication statusPublished - 1982

    Fingerprint

    Electron-phonon interactions
    Phonons
    Conduction bands
    Relaxation time
    Equations of motion
    valleys
    attenuation
    Acoustic waves
    Semiconductor materials
    electron phonon interactions
    conduction bands
    equations of motion
    phonons
    relaxation time
    acoustics
    approximation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Phonon attenuation in heavily doped many-valley semiconductors. / Sota, Takayuki; Suzuki, K.

    In: Journal of Physics C: Solid State Physics, Vol. 15, No. 34, 012, 1982, p. 6991-7002.

    Research output: Contribution to journalArticle

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