Abstract
An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for q<or approximately=2kF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.
| Original language | English |
|---|---|
| Article number | 012 |
| Pages (from-to) | 6991-7002 |
| Number of pages | 12 |
| Journal | Journal of Physics C: Solid State Physics |
| Volume | 15 |
| Issue number | 34 |
| DOIs | |
| Publication status | Published - 1982 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Phonon attenuation in heavily doped many-valley semiconductors. / Sota, Takayuki; Suzuki, K.
In: Journal of Physics C: Solid State Physics, Vol. 15, No. 34, 012, 1982, p. 6991-7002.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phonon attenuation in heavily doped many-valley semiconductors
AU - Sota, Takayuki
AU - Suzuki, K.
PY - 1982
Y1 - 1982
N2 - An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for qF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.
AB - An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for qF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.
UR - http://www.scopus.com/inward/record.url?scp=3042992539&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3042992539&partnerID=8YFLogxK
U2 - 10.1088/0022-3719/15/34/012
DO - 10.1088/0022-3719/15/34/012
M3 - Article
AN - SCOPUS:3042992539
VL - 15
SP - 6991
EP - 7002
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 34
M1 - 012
ER -