Abstract
An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for q<or approximately=2kF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.
| Original language | English |
|---|---|
| Article number | 012 |
| Pages (from-to) | 6991-7002 |
| Number of pages | 12 |
| Journal | Journal of Physics C: Solid State Physics |
| Volume | 15 |
| Issue number | 34 |
| DOIs | |
| Publication status | Published - 1982 Dec 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Engineering(all)
- Physics and Astronomy(all)
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Sota, T., & Suzuki, K. (1982). Phonon attenuation in heavily doped many-valley semiconductors. Journal of Physics C: Solid State Physics, 15(34), 6991-7002. [012]. https://doi.org/10.1088/0022-3719/15/34/012