### Abstract

For pt.I see ibid., vol.15, p.6991 (1982). The authors have derived the phonon relaxation rate for anisotropic mass cases in heavily doped many-valley semiconductors by solving the equations of motion for the single-particle density matrices within the self-consistent field and the relaxation time approximations. Explicit expressions have been given for longitudinal and transverse waves propagating along the principal directions in Ge and Si. Numerical calculations have been performed for n-type Ge at T=0K. The following have been found. The effect of the mass anisotropy is remarkable in the high-frequency region, while in the low-frequency region it becomes negligibly small. There exist two cut-off wavenumbers in the electron-phonon interaction for the (110) and (111) longitudinal mode is qualitatively the same as in the isotropic mass case. A discussion of the recent work on phonon absorption due to the electron-hole liquid (EHL) in Ge by Dietsche et al. (1982) is also given.

Original language | English |
---|---|

Article number | 012 |

Pages (from-to) | 4347-4364 |

Number of pages | 18 |

Journal | Journal of Physics C: Solid State Physics |

Volume | 16 |

Issue number | 22 |

DOIs | |

Publication status | Published - 1983 |

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### ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics

### Cite this

*Journal of Physics C: Solid State Physics*,

*16*(22), 4347-4364. [012]. https://doi.org/10.1088/0022-3719/16/22/012

**Phonon attenuation in heavily doped many-valley semiconductors. II. the effect of mass anisotropy.** / Sota, Takayuki; Suzuki, K.

Research output: Contribution to journal › Article

*Journal of Physics C: Solid State Physics*, vol. 16, no. 22, 012, pp. 4347-4364. https://doi.org/10.1088/0022-3719/16/22/012

}

TY - JOUR

T1 - Phonon attenuation in heavily doped many-valley semiconductors. II. the effect of mass anisotropy

AU - Sota, Takayuki

AU - Suzuki, K.

PY - 1983

Y1 - 1983

N2 - For pt.I see ibid., vol.15, p.6991 (1982). The authors have derived the phonon relaxation rate for anisotropic mass cases in heavily doped many-valley semiconductors by solving the equations of motion for the single-particle density matrices within the self-consistent field and the relaxation time approximations. Explicit expressions have been given for longitudinal and transverse waves propagating along the principal directions in Ge and Si. Numerical calculations have been performed for n-type Ge at T=0K. The following have been found. The effect of the mass anisotropy is remarkable in the high-frequency region, while in the low-frequency region it becomes negligibly small. There exist two cut-off wavenumbers in the electron-phonon interaction for the (110) and (111) longitudinal mode is qualitatively the same as in the isotropic mass case. A discussion of the recent work on phonon absorption due to the electron-hole liquid (EHL) in Ge by Dietsche et al. (1982) is also given.

AB - For pt.I see ibid., vol.15, p.6991 (1982). The authors have derived the phonon relaxation rate for anisotropic mass cases in heavily doped many-valley semiconductors by solving the equations of motion for the single-particle density matrices within the self-consistent field and the relaxation time approximations. Explicit expressions have been given for longitudinal and transverse waves propagating along the principal directions in Ge and Si. Numerical calculations have been performed for n-type Ge at T=0K. The following have been found. The effect of the mass anisotropy is remarkable in the high-frequency region, while in the low-frequency region it becomes negligibly small. There exist two cut-off wavenumbers in the electron-phonon interaction for the (110) and (111) longitudinal mode is qualitatively the same as in the isotropic mass case. A discussion of the recent work on phonon absorption due to the electron-hole liquid (EHL) in Ge by Dietsche et al. (1982) is also given.

UR - http://www.scopus.com/inward/record.url?scp=36149042413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36149042413&partnerID=8YFLogxK

U2 - 10.1088/0022-3719/16/22/012

DO - 10.1088/0022-3719/16/22/012

M3 - Article

AN - SCOPUS:36149042413

VL - 16

SP - 4347

EP - 4364

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 22

M1 - 012

ER -