Phonon attenuation in heavily doped many-valley semiconductors. II. the effect of mass anisotropy

Takayuki Sota, K. Suzuki

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    For pt.I see ibid., vol.15, p.6991 (1982). The authors have derived the phonon relaxation rate for anisotropic mass cases in heavily doped many-valley semiconductors by solving the equations of motion for the single-particle density matrices within the self-consistent field and the relaxation time approximations. Explicit expressions have been given for longitudinal and transverse waves propagating along the principal directions in Ge and Si. Numerical calculations have been performed for n-type Ge at T=0K. The following have been found. The effect of the mass anisotropy is remarkable in the high-frequency region, while in the low-frequency region it becomes negligibly small. There exist two cut-off wavenumbers in the electron-phonon interaction for the (110) and (111) longitudinal mode is qualitatively the same as in the isotropic mass case. A discussion of the recent work on phonon absorption due to the electron-hole liquid (EHL) in Ge by Dietsche et al. (1982) is also given.

    Original languageEnglish
    Article number012
    Pages (from-to)4347-4364
    Number of pages18
    JournalJournal of Physics C: Solid State Physics
    Volume16
    Issue number22
    DOIs
    Publication statusPublished - 1983

    Fingerprint

    Electron-phonon interactions
    Relaxation time
    Equations of motion
    valleys
    Anisotropy
    attenuation
    Semiconductor materials
    anisotropy
    Electrons
    Liquids
    transverse waves
    longitudinal waves
    electron phonon interactions
    self consistent fields
    equations of motion
    cut-off
    relaxation time
    low frequencies
    liquids
    approximation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Phonon attenuation in heavily doped many-valley semiconductors. II. the effect of mass anisotropy. / Sota, Takayuki; Suzuki, K.

    In: Journal of Physics C: Solid State Physics, Vol. 16, No. 22, 012, 1983, p. 4347-4364.

    Research output: Contribution to journalArticle

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    N2 - For pt.I see ibid., vol.15, p.6991 (1982). The authors have derived the phonon relaxation rate for anisotropic mass cases in heavily doped many-valley semiconductors by solving the equations of motion for the single-particle density matrices within the self-consistent field and the relaxation time approximations. Explicit expressions have been given for longitudinal and transverse waves propagating along the principal directions in Ge and Si. Numerical calculations have been performed for n-type Ge at T=0K. The following have been found. The effect of the mass anisotropy is remarkable in the high-frequency region, while in the low-frequency region it becomes negligibly small. There exist two cut-off wavenumbers in the electron-phonon interaction for the (110) and (111) longitudinal mode is qualitatively the same as in the isotropic mass case. A discussion of the recent work on phonon absorption due to the electron-hole liquid (EHL) in Ge by Dietsche et al. (1982) is also given.

    AB - For pt.I see ibid., vol.15, p.6991 (1982). The authors have derived the phonon relaxation rate for anisotropic mass cases in heavily doped many-valley semiconductors by solving the equations of motion for the single-particle density matrices within the self-consistent field and the relaxation time approximations. Explicit expressions have been given for longitudinal and transverse waves propagating along the principal directions in Ge and Si. Numerical calculations have been performed for n-type Ge at T=0K. The following have been found. The effect of the mass anisotropy is remarkable in the high-frequency region, while in the low-frequency region it becomes negligibly small. There exist two cut-off wavenumbers in the electron-phonon interaction for the (110) and (111) longitudinal mode is qualitatively the same as in the isotropic mass case. A discussion of the recent work on phonon absorption due to the electron-hole liquid (EHL) in Ge by Dietsche et al. (1982) is also given.

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