Phonon attenuation in heavily doped p-type semiconductors

Takayuki Sota, K. Suzuki

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    An expression for the phonon relaxation rate in heavily doped p-type semiconductors with the diamond and the zincblende structures has been derived by extending the formulation obtained previously for heavily doped n-type many-valley semiconductors, where the authors have taken account of the interband hole-phonon interactions, the intraband one and both the deformation potential and the piezoelectric coupling. Explicit expressions for the phonon relaxation rate have been given using an approximation suitable to the small-wavenumber region. Numerical calculations have been performed for a model semiconductor at T=0K. The wavenumber dependence of the phonon relaxation rate is qualitatively different from that obtained previously within a single-band approximation. The shear components of the hole-phonon interaction play an important role in the small-wavenumber region. A contribution of the interband hole-phonon interaction, which can become large for transverse modes, occurs only in a certain wavenumber region and its relative importance depends on the ratio of the light hole mass to the heavy hole one. The phonon relaxation rate via the piezoelectric coupling is smaller than that via the deformation potential one in heavily doped p-type III-V compound semiconductors.

    Original languageEnglish
    Article number006
    Pages (from-to)2661-2680
    Number of pages20
    JournalJournal of Physics C: Solid State Physics
    Volume17
    Issue number15
    DOIs
    Publication statusPublished - 1984

    Fingerprint

    p-type semiconductors
    attenuation
    Semiconductor device models
    Semiconductor materials
    Diamond
    Diamonds
    zincblende
    interactions
    approximation
    valleys
    diamonds
    shear
    formulations
    III-V semiconductors

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Phonon attenuation in heavily doped p-type semiconductors. / Sota, Takayuki; Suzuki, K.

    In: Journal of Physics C: Solid State Physics, Vol. 17, No. 15, 006, 1984, p. 2661-2680.

    Research output: Contribution to journalArticle

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    abstract = "An expression for the phonon relaxation rate in heavily doped p-type semiconductors with the diamond and the zincblende structures has been derived by extending the formulation obtained previously for heavily doped n-type many-valley semiconductors, where the authors have taken account of the interband hole-phonon interactions, the intraband one and both the deformation potential and the piezoelectric coupling. Explicit expressions for the phonon relaxation rate have been given using an approximation suitable to the small-wavenumber region. Numerical calculations have been performed for a model semiconductor at T=0K. The wavenumber dependence of the phonon relaxation rate is qualitatively different from that obtained previously within a single-band approximation. The shear components of the hole-phonon interaction play an important role in the small-wavenumber region. A contribution of the interband hole-phonon interaction, which can become large for transverse modes, occurs only in a certain wavenumber region and its relative importance depends on the ratio of the light hole mass to the heavy hole one. The phonon relaxation rate via the piezoelectric coupling is smaller than that via the deformation potential one in heavily doped p-type III-V compound semiconductors.",
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