Phonon dispersion in <100> Si nanowire covered with SiO2 Film calculated by molecular dynamics simulation

Takanobu Watanabe, T. Zushi, Motohiro Tomita, R. Kuriyama, N. Aoki, T. Kamioka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The phonon dispersion relation in <100> Si nanowire (SiNW) is calculated by employing a realistic atomistic model surrounded by thin SiO 2 layers. We performed molecular dynamics simulation to calculate the dynamical structure factor by the space-time Fourier transform of atomic trajectories, and extracted the phonon dispersion relations. Although the bulk dispersion relations are maintained in the SiNWs on the whole, acoustic phonon branches are diffused beyond recognition, which is considered as the origin of the thermal conductivity degradation in SiNWs. A red shift of the transverse optical mode also appears probably due to the lattice strain induced by the outer oxide film. These results provide a foothold to estimate the electron-phonon scattering rates and the heat transport processes in realistic SiNWs.

Original languageEnglish
Title of host publicationECS Transactions
Pages673-680
Number of pages8
Volume50
Edition9
DOIs
Publication statusPublished - 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI
Duration: 2012 Oct 72012 Oct 12

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CityHonolulu, HI
Period12/10/712/10/12

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ASJC Scopus subject areas

  • Engineering(all)

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