Phonons with long mean free paths in a-Si and a-Ge

Tianzhuo Zhan, Yibin Xu, Masahiro Goto, Yoshihisa Tanaka, Ryozo Kato, Michiko Sasaki, Yutaka Kagawa

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Abstract

We investigated phonons with long mean free paths (MFPs) in amorphous Si (a-Si) and amorphous Ge (a-Ge). The thermal conductivity of a-Si and a-Ge thin films prepared by magnetron sputtering was found to depend on film thickness and deposition temperature. From the film thickness dependence, we conclude that phonons with MFPs longer than 100 nm contribute to heat transport in a-Si and a-Ge. Also, as deposition temperature was increased, phonons with MFPs ranging from 100 to 250 nm in a-Si and from 15 to 250 nm in a-Ge increased.

Original languageEnglish
Article number071911
JournalApplied Physics Letters
Volume104
Issue number7
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhan, T., Xu, Y., Goto, M., Tanaka, Y., Kato, R., Sasaki, M., & Kagawa, Y. (2014). Phonons with long mean free paths in a-Si and a-Ge. Applied Physics Letters, 104(7), [071911]. https://doi.org/10.1063/1.4866799