Photo-induced refractive index change in hydrogenated amorphous silicon oxynitride

Hiromitsu Kato, Makoto Fujimaki, Takashi Noma, Yoshimichi Ohki

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Abstract

Refractive index change is shown to be induced by the irradiation of ultraviolet photons in hydrogenated amorphous silicon oxynitride films prepared by plasma-enhanced chemical vapor deposition. The mechanism of the index change and its dependence on the nitrogen content were investigated by electron spin resonance and scanning electron microscopy. It is concluded that the index change is due mainly to densification, and that the contribution of the formation of paramagnetic defects is only slight. To demonstrate the versatility of this refractive index change, a planar diffraction grating was fabricated.

Original languageEnglish
Pages (from-to)6350-6353
Number of pages4
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
Publication statusPublished - 2002 May 15

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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