Photo-induced refractive index change in hydrogenated amorphous silicon oxynitride

Hiromitsu Kato, Makoto Fujimaki, Takashi Noma, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    13 Citations (Scopus)

    Abstract

    Refractive index change is shown to be induced by the irradiation of ultraviolet photons in hydrogenated amorphous silicon oxynitride films prepared by plasma-enhanced chemical vapor deposition. The mechanism of the index change and its dependence on the nitrogen content were investigated by electron spin resonance and scanning electron microscopy. It is concluded that the index change is due mainly to densification, and that the contribution of the formation of paramagnetic defects is only slight. To demonstrate the versatility of this refractive index change, a planar diffraction grating was fabricated.

    Original languageEnglish
    Pages (from-to)6350-6353
    Number of pages4
    JournalJournal of Applied Physics
    Volume91
    Issue number10 I
    DOIs
    Publication statusPublished - 2002 May 15

    Fingerprint

    oxynitrides
    amorphous silicon
    refractivity
    versatility
    densification
    gratings (spectra)
    electron paramagnetic resonance
    vapor deposition
    nitrogen
    scanning electron microscopy
    irradiation
    defects
    photons

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Photo-induced refractive index change in hydrogenated amorphous silicon oxynitride. / Kato, Hiromitsu; Fujimaki, Makoto; Noma, Takashi; Ohki, Yoshimichi.

    In: Journal of Applied Physics, Vol. 91, No. 10 I, 15.05.2002, p. 6350-6353.

    Research output: Contribution to journalArticle

    Kato, Hiromitsu ; Fujimaki, Makoto ; Noma, Takashi ; Ohki, Yoshimichi. / Photo-induced refractive index change in hydrogenated amorphous silicon oxynitride. In: Journal of Applied Physics. 2002 ; Vol. 91, No. 10 I. pp. 6350-6353.
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