Abstract
Amorphous silicon dioxide films were deposited from oxygen, disilane (Si2H6), and perfluorosilanes (Si2F6 or SiF4) by photochemical vapor deposition using a deuterium lamp at a substrate temperature of as low as 200 °C. It was found that by mixing Si2F6, defects such as H and OH in the films were effectively removed with an enhancement in the growth rate and a slight doping of fluorine into the films, while SiF4 had no effect except a little doping of fluorine. The generation and extinction of defects including H, OH, and SiSi were investigated quantitatively by measuring infrared spectra and vacuum ultraviolet absorptions at the optical band edge. The model on the deposition process was proposed that photodissociated F-containing radicals eliminate H and activate the growing surface, resulting in enhancing the deposition rate.
| Original language | English |
|---|---|
| Pages (from-to) | 4168-4174 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 64 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1988 Dec 1 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes : Defect structures and deposition mechanism. / Nonaka, Hidehiko; Arai, Kazuo; Fujino, Yoshiyuki; Ichimura, Shingo.
In: Journal of Applied Physics, Vol. 64, No. 8, 01.12.1988, p. 4168-4174.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes
T2 - Defect structures and deposition mechanism
AU - Nonaka, Hidehiko
AU - Arai, Kazuo
AU - Fujino, Yoshiyuki
AU - Ichimura, Shingo
PY - 1988/12/1
Y1 - 1988/12/1
N2 - Amorphous silicon dioxide films were deposited from oxygen, disilane (Si2H6), and perfluorosilanes (Si2F6 or SiF4) by photochemical vapor deposition using a deuterium lamp at a substrate temperature of as low as 200 °C. It was found that by mixing Si2F6, defects such as H and OH in the films were effectively removed with an enhancement in the growth rate and a slight doping of fluorine into the films, while SiF4 had no effect except a little doping of fluorine. The generation and extinction of defects including H, OH, and SiSi were investigated quantitatively by measuring infrared spectra and vacuum ultraviolet absorptions at the optical band edge. The model on the deposition process was proposed that photodissociated F-containing radicals eliminate H and activate the growing surface, resulting in enhancing the deposition rate.
AB - Amorphous silicon dioxide films were deposited from oxygen, disilane (Si2H6), and perfluorosilanes (Si2F6 or SiF4) by photochemical vapor deposition using a deuterium lamp at a substrate temperature of as low as 200 °C. It was found that by mixing Si2F6, defects such as H and OH in the films were effectively removed with an enhancement in the growth rate and a slight doping of fluorine into the films, while SiF4 had no effect except a little doping of fluorine. The generation and extinction of defects including H, OH, and SiSi were investigated quantitatively by measuring infrared spectra and vacuum ultraviolet absorptions at the optical band edge. The model on the deposition process was proposed that photodissociated F-containing radicals eliminate H and activate the growing surface, resulting in enhancing the deposition rate.
UR - http://www.scopus.com/inward/record.url?scp=0003953104&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0003953104&partnerID=8YFLogxK
U2 - 10.1063/1.341330
DO - 10.1063/1.341330
M3 - Article
AN - SCOPUS:0003953104
VL - 64
SP - 4168
EP - 4174
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
ER -