Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes: Defect structures and deposition mechanism

Hidehiko Nonaka, Kazuo Arai, Yoshiyuki Fujino, Shingo Ichimura

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Amorphous silicon dioxide films were deposited from oxygen, disilane (Si2H6), and perfluorosilanes (Si2F6 or SiF4) by photochemical vapor deposition using a deuterium lamp at a substrate temperature of as low as 200 °C. It was found that by mixing Si2F6, defects such as H and OH in the films were effectively removed with an enhancement in the growth rate and a slight doping of fluorine into the films, while SiF4 had no effect except a little doping of fluorine. The generation and extinction of defects including H, OH, and SiSi were investigated quantitatively by measuring infrared spectra and vacuum ultraviolet absorptions at the optical band edge. The model on the deposition process was proposed that photodissociated F-containing radicals eliminate H and activate the growing surface, resulting in enhancing the deposition rate.

Original languageEnglish
Pages (from-to)4168-4174
Number of pages7
JournalJournal of Applied Physics
Volume64
Issue number8
DOIs
Publication statusPublished - 1988 Dec 1
Externally publishedYes

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vapor deposition
silicon dioxide
fluorine
defects
ultraviolet absorption
luminaires
amorphous silicon
deuterium
extinction
infrared spectra
vacuum
augmentation
oxygen
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes : Defect structures and deposition mechanism. / Nonaka, Hidehiko; Arai, Kazuo; Fujino, Yoshiyuki; Ichimura, Shingo.

In: Journal of Applied Physics, Vol. 64, No. 8, 01.12.1988, p. 4168-4174.

Research output: Contribution to journalArticle

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