Photocreated metastable states in polysilanes

Kyozaburo Takeda, Kenji Shiraishi, Michiya Fujiki, Michio Kondo, Kazuo Morigaki

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Abstract

Photocreated metastable states in organopolysilane (PSi) solids are observed using the electron-spin-resonance (ESR) technique. Two types of light-induced ESR (LESR) spectra are found depending on the excitation photon energy. These two types of LESR centers are annihilated by thermal annealing. Based on a first-principle electronic calculation, the origins of these LESR centers have been discussed. The lowest photoexcitation (∼3.5 eV) in PSi induces the Si skeleton stretching forces, which creates a weak bond (WB) in several places of the Si skeleton. Electronically, this WB acts as a self-trapping center for the photoexcited σ electron. The other higher photoexcitation (over 4.8 eV) causes side-pendant dissociation, which creates a dangling bond (DB) and causes the localized midgap state. The four lines found in the higher-energy excitation are considered to arise from hyperfine interaction between this DB electron and a sodium impurity nucleus.

Original languageEnglish
Pages (from-to)5171-5179
Number of pages9
JournalPhysical Review B
Volume50
Issue number8
DOIs
Publication statusPublished - 1994
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Takeda, K., Shiraishi, K., Fujiki, M., Kondo, M., & Morigaki, K. (1994). Photocreated metastable states in polysilanes. Physical Review B, 50(8), 5171-5179. https://doi.org/10.1103/PhysRevB.50.5171