Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

J. I. Hwang, Y. Ishida, M. Kobayashi, Y. Osafune, Takashi Mizokawa, A. Fujimori, Y. Takeda, K. Terai, S. I. Fujimori, Y. Saitoh, Y. Muramatsu, A. Tanaka, T. Kondo, H. Munekata, M. Hashimoto, H. Tanaka, S. Hasegawa, H. Asahi

Research output: Contribution to journalArticle

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Abstract

We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.

Original languageEnglish
Pages (from-to)1696-1700
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number7
DOIs
Publication statusPublished - 2006 Jun
Externally publishedYes

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X ray absorption spectroscopy
X ray absorption
Photoemission
Valence bands
Electronic structure
Energy gap
photoelectric emission
Doping (additives)
electronic structure
Photoelectron spectroscopy
valence
absorption spectroscopy
x rays
Ions
Crystals
shoulders
crystal field theory
Diluted magnetic semiconductors
spectroscopy
ions

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors. / Hwang, J. I.; Ishida, Y.; Kobayashi, M.; Osafune, Y.; Mizokawa, Takashi; Fujimori, A.; Takeda, Y.; Terai, K.; Fujimori, S. I.; Saitoh, Y.; Muramatsu, Y.; Tanaka, A.; Kondo, T.; Munekata, H.; Hashimoto, M.; Tanaka, H.; Hasegawa, S.; Asahi, H.

In: Physica Status Solidi (B) Basic Research, Vol. 243, No. 7, 06.2006, p. 1696-1700.

Research output: Contribution to journalArticle

Hwang, JI, Ishida, Y, Kobayashi, M, Osafune, Y, Mizokawa, T, Fujimori, A, Takeda, Y, Terai, K, Fujimori, SI, Saitoh, Y, Muramatsu, Y, Tanaka, A, Kondo, T, Munekata, H, Hashimoto, M, Tanaka, H, Hasegawa, S & Asahi, H 2006, 'Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors', Physica Status Solidi (B) Basic Research, vol. 243, no. 7, pp. 1696-1700. https://doi.org/10.1002/pssb.200565329
Hwang, J. I. ; Ishida, Y. ; Kobayashi, M. ; Osafune, Y. ; Mizokawa, Takashi ; Fujimori, A. ; Takeda, Y. ; Terai, K. ; Fujimori, S. I. ; Saitoh, Y. ; Muramatsu, Y. ; Tanaka, A. ; Kondo, T. ; Munekata, H. ; Hashimoto, M. ; Tanaka, H. ; Hasegawa, S. ; Asahi, H. / Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors. In: Physica Status Solidi (B) Basic Research. 2006 ; Vol. 243, No. 7. pp. 1696-1700.
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AU - Ishida, Y.

AU - Kobayashi, M.

AU - Osafune, Y.

AU - Mizokawa, Takashi

AU - Fujimori, A.

AU - Takeda, Y.

AU - Terai, K.

AU - Fujimori, S. I.

AU - Saitoh, Y.

AU - Muramatsu, Y.

AU - Tanaka, A.

AU - Kondo, T.

AU - Munekata, H.

AU - Hashimoto, M.

AU - Tanaka, H.

AU - Hasegawa, S.

AU - Asahi, H.

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N2 - We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.

AB - We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.

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