Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

J. I. Hwang; Y. Ishida; M. Kobayashi; Y. Osafune; T. Mizokawa; A. Fujimori; Y. Takeda; K. Terai; S. I. Fujimori; Y. Saitoh; Y. Muramatsu; A. Tanaka; T. Kondo; H. Munekata; M. Hashimoto; H. Tanaka; S. Hasegawa; H. Asahi

doi:10.1002/pssb.200565329

Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

J. I. Hwang^*, Y. Ishida, M. Kobayashi, Y. Osafune, T. Mizokawa, A. Fujimori, Y. Takeda, K. Terai, S. I. Fujimori, Y. Saitoh, Y. Muramatsu, A. Tanaka, T. Kondo, H. Munekata, M. Hashimoto, H. Tanaka, S. Hasegawa, H. Asahi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga_1-xCr_xN and Ga_1-xMn_xN.

Original language	English
Pages (from-to)	1696-1700
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	243
Issue number	7
DOIs	https://doi.org/10.1002/pssb.200565329
Publication status	Published - 2006 Jun
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Hwang, J. I., Ishida, Y., Kobayashi, M., Osafune, Y., Mizokawa, T., Fujimori, A., Takeda, Y., Terai, K., Fujimori, S. I., Saitoh, Y., Muramatsu, Y., Tanaka, A., Kondo, T., Munekata, H., Hashimoto, M., Tanaka, H., Hasegawa, S., & Asahi, H. (2006). Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors. Physica Status Solidi (B) Basic Research, 243(7), 1696-1700. https://doi.org/10.1002/pssb.200565329

Hwang, JI, Ishida, Y, Kobayashi, M, Osafune, Y, Mizokawa, T, Fujimori, A, Takeda, Y, Terai, K, Fujimori, SI, Saitoh, Y, Muramatsu, Y, Tanaka, A, Kondo, T, Munekata, H, Hashimoto, M, Tanaka, H, Hasegawa, S & Asahi, H 2006, 'Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors', Physica Status Solidi (B) Basic Research, vol. 243, no. 7, pp. 1696-1700. https://doi.org/10.1002/pssb.200565329

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title = "Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors",

abstract = "We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.",

author = "Hwang, {J. I.} and Y. Ishida and M. Kobayashi and Y. Osafune and T. Mizokawa and A. Fujimori and Y. Takeda and K. Terai and Fujimori, {S. I.} and Y. Saitoh and Y. Muramatsu and A. Tanaka and T. Kondo and H. Munekata and M. Hashimoto and H. Tanaka and S. Hasegawa and H. Asahi",

year = "2006",

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doi = "10.1002/pssb.200565329",

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AU - Hwang, J. I.

AU - Ishida, Y.

AU - Kobayashi, M.

AU - Osafune, Y.

AU - Mizokawa, T.

AU - Fujimori, A.

AU - Takeda, Y.

AU - Terai, K.

AU - Fujimori, S. I.

AU - Saitoh, Y.

AU - Muramatsu, Y.

AU - Tanaka, A.

AU - Kondo, T.

AU - Munekata, H.

AU - Hashimoto, M.

AU - Tanaka, H.

AU - Hasegawa, S.

AU - Asahi, H.

PY - 2006/6

Y1 - 2006/6

N2 - We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.

AB - We have investigated the electronic structure of Cr- and Mn-doped GaN using photoemission spectros-copy (PES) and X-ray absorption spectroscopy (XAS). Cr and Mn XAS at the L-edge have indicated that the Cr and Mn ions are in the tetrahedral crystal field and that their valences are trivalent and divalent, respectively. Upon Cr and Mn doping into GaN, new states were found to form in the band-gap region of GaN. Resonant photoemission spectroscopy (RPES) has revealed that the main structure of the Cr 3d partial density of states (PDOS) appears within the band gap of GaN while that of the Mn 3d PDOS appears within the valence band of GaN and as a shoulder above the valence-band maximum of GaN, indicating that the character of the doping-induced states is different between Ga1-xCrxN and Ga1-xMnxN.

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Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

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