Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond

H. Okazaki, T. Arakane, K. Sugawara, T. Sato, T. Takahashi, T. Wakita, M. Hirai, Y. Muraoka, Y. Takano, S. Ishii, S. Iriyama, Hiroshi Kawarada, T. Yokoya

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.

    Original languageEnglish
    Pages (from-to)582-584
    Number of pages3
    JournalJournal of Physics and Chemistry of Solids
    Volume72
    Issue number5
    DOIs
    Publication statusPublished - 2011 May

    Fingerprint

    Diamond
    Photoemission
    Photoelectron spectroscopy
    Electron transitions
    Ultraviolet spectroscopy
    Electronic structure
    Diamonds
    photoelectric emission
    diamonds
    electronic structure
    Valence bands
    Carrier concentration
    Semiconductor device models
    spectroscopy
    valence
    Diamond films
    Electronic states
    Theophylline
    Fermi level
    diamond films

    Keywords

    • A. Semiconductors
    • A. Superconductors
    • C. Photoelectron spectroscopy

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Chemistry(all)
    • Materials Science(all)

    Cite this

    Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond. / Okazaki, H.; Arakane, T.; Sugawara, K.; Sato, T.; Takahashi, T.; Wakita, T.; Hirai, M.; Muraoka, Y.; Takano, Y.; Ishii, S.; Iriyama, S.; Kawarada, Hiroshi; Yokoya, T.

    In: Journal of Physics and Chemistry of Solids, Vol. 72, No. 5, 05.2011, p. 582-584.

    Research output: Contribution to journalArticle

    Okazaki, H, Arakane, T, Sugawara, K, Sato, T, Takahashi, T, Wakita, T, Hirai, M, Muraoka, Y, Takano, Y, Ishii, S, Iriyama, S, Kawarada, H & Yokoya, T 2011, 'Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond', Journal of Physics and Chemistry of Solids, vol. 72, no. 5, pp. 582-584. https://doi.org/10.1016/j.jpcs.2010.10.052
    Okazaki, H. ; Arakane, T. ; Sugawara, K. ; Sato, T. ; Takahashi, T. ; Wakita, T. ; Hirai, M. ; Muraoka, Y. ; Takano, Y. ; Ishii, S. ; Iriyama, S. ; Kawarada, Hiroshi ; Yokoya, T. / Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond. In: Journal of Physics and Chemistry of Solids. 2011 ; Vol. 72, No. 5. pp. 582-584.
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