Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond

H. Okazaki, T. Arakane, K. Sugawara, T. Sato, T. Takahashi, T. Wakita, M. Hirai, Y. Muraoka, Y. Takano, S. Ishii, S. Iriyama, H. Kawarada, T. Yokoya

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.

Original languageEnglish
Pages (from-to)582-584
Number of pages3
JournalJournal of Physics and Chemistry of Solids
Volume72
Issue number5
DOIs
Publication statusPublished - 2011 May

Keywords

  • A. Semiconductors
  • A. Superconductors
  • C. Photoelectron spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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