Photoemission study of the metal-insulator transition in NiS2-xSex

K. Mamiya, Takashi Mizokawa, A. Fujimori, T. Miyadai, N. Chandrasekharan, S. R. Krishnakumar, D. D. Sarma, H. Takahashi, N. Môri, S. Suga

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have studied the electronic structure of NiS2-xSex, which undergoes a metal-insulator transition as functions of composition x and temperature, by means of photoemission and inverse-photoemission spectroscopy. Spectral changes across the transition near the Fermi level (EF) (particularly within ∼ 100 meV of EF) have been interpreted as due to a "semimetallic" closure of the band gap in going from the insulating phase to the antiferromagnetic metallic phase. On the other hand, there is also composition- and temperature-dependent spectral weight transfer over a wider energy range of ∼0.5-1 eV, indicating significant correlation effects. Photoemission intensity just below EF remains high in the insulating phases, indicating that the carrier number is large at high temperatures and that the activation-type transport is due to the activated mobility rather than the activated carrier number.

Original languageEnglish
Pages (from-to)9611-9614
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number15
Publication statusPublished - 1998 Oct 15
Externally publishedYes

Fingerprint

Metal insulator transition
Photoemission
photoelectric emission
insulators
metals
Photoelectron spectroscopy
Electron transitions
Fermi level
Chemical analysis
Temperature
closures
Electronic structure
Energy gap
Chemical activation
activation
electronic structure
temperature
spectroscopy
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Mamiya, K., Mizokawa, T., Fujimori, A., Miyadai, T., Chandrasekharan, N., Krishnakumar, S. R., ... Suga, S. (1998). Photoemission study of the metal-insulator transition in NiS2-xSex. Physical Review B - Condensed Matter and Materials Physics, 58(15), 9611-9614.

Photoemission study of the metal-insulator transition in NiS2-xSex. / Mamiya, K.; Mizokawa, Takashi; Fujimori, A.; Miyadai, T.; Chandrasekharan, N.; Krishnakumar, S. R.; Sarma, D. D.; Takahashi, H.; Môri, N.; Suga, S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 15, 15.10.1998, p. 9611-9614.

Research output: Contribution to journalArticle

Mamiya, K, Mizokawa, T, Fujimori, A, Miyadai, T, Chandrasekharan, N, Krishnakumar, SR, Sarma, DD, Takahashi, H, Môri, N & Suga, S 1998, 'Photoemission study of the metal-insulator transition in NiS2-xSex', Physical Review B - Condensed Matter and Materials Physics, vol. 58, no. 15, pp. 9611-9614.
Mamiya K, Mizokawa T, Fujimori A, Miyadai T, Chandrasekharan N, Krishnakumar SR et al. Photoemission study of the metal-insulator transition in NiS2-xSex. Physical Review B - Condensed Matter and Materials Physics. 1998 Oct 15;58(15):9611-9614.
Mamiya, K. ; Mizokawa, Takashi ; Fujimori, A. ; Miyadai, T. ; Chandrasekharan, N. ; Krishnakumar, S. R. ; Sarma, D. D. ; Takahashi, H. ; Môri, N. ; Suga, S. / Photoemission study of the metal-insulator transition in NiS2-xSex. In: Physical Review B - Condensed Matter and Materials Physics. 1998 ; Vol. 58, No. 15. pp. 9611-9614.
@article{e88c543f1ac043289ea3c084a2691da8,
title = "Photoemission study of the metal-insulator transition in NiS2-xSex",
abstract = "We have studied the electronic structure of NiS2-xSex, which undergoes a metal-insulator transition as functions of composition x and temperature, by means of photoemission and inverse-photoemission spectroscopy. Spectral changes across the transition near the Fermi level (EF) (particularly within ∼ 100 meV of EF) have been interpreted as due to a {"}semimetallic{"} closure of the band gap in going from the insulating phase to the antiferromagnetic metallic phase. On the other hand, there is also composition- and temperature-dependent spectral weight transfer over a wider energy range of ∼0.5-1 eV, indicating significant correlation effects. Photoemission intensity just below EF remains high in the insulating phases, indicating that the carrier number is large at high temperatures and that the activation-type transport is due to the activated mobility rather than the activated carrier number.",
author = "K. Mamiya and Takashi Mizokawa and A. Fujimori and T. Miyadai and N. Chandrasekharan and Krishnakumar, {S. R.} and Sarma, {D. D.} and H. Takahashi and N. M{\^o}ri and S. Suga",
year = "1998",
month = "10",
day = "15",
language = "English",
volume = "58",
pages = "9611--9614",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Photoemission study of the metal-insulator transition in NiS2-xSex

AU - Mamiya, K.

AU - Mizokawa, Takashi

AU - Fujimori, A.

AU - Miyadai, T.

AU - Chandrasekharan, N.

AU - Krishnakumar, S. R.

AU - Sarma, D. D.

AU - Takahashi, H.

AU - Môri, N.

AU - Suga, S.

PY - 1998/10/15

Y1 - 1998/10/15

N2 - We have studied the electronic structure of NiS2-xSex, which undergoes a metal-insulator transition as functions of composition x and temperature, by means of photoemission and inverse-photoemission spectroscopy. Spectral changes across the transition near the Fermi level (EF) (particularly within ∼ 100 meV of EF) have been interpreted as due to a "semimetallic" closure of the band gap in going from the insulating phase to the antiferromagnetic metallic phase. On the other hand, there is also composition- and temperature-dependent spectral weight transfer over a wider energy range of ∼0.5-1 eV, indicating significant correlation effects. Photoemission intensity just below EF remains high in the insulating phases, indicating that the carrier number is large at high temperatures and that the activation-type transport is due to the activated mobility rather than the activated carrier number.

AB - We have studied the electronic structure of NiS2-xSex, which undergoes a metal-insulator transition as functions of composition x and temperature, by means of photoemission and inverse-photoemission spectroscopy. Spectral changes across the transition near the Fermi level (EF) (particularly within ∼ 100 meV of EF) have been interpreted as due to a "semimetallic" closure of the band gap in going from the insulating phase to the antiferromagnetic metallic phase. On the other hand, there is also composition- and temperature-dependent spectral weight transfer over a wider energy range of ∼0.5-1 eV, indicating significant correlation effects. Photoemission intensity just below EF remains high in the insulating phases, indicating that the carrier number is large at high temperatures and that the activation-type transport is due to the activated mobility rather than the activated carrier number.

UR - http://www.scopus.com/inward/record.url?scp=0006076632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006076632&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0006076632

VL - 58

SP - 9611

EP - 9614

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 15

ER -