Photoemission study of the SiO2 /Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces

Michio Niwano, Hitoshi Katakura, Yuki Takeda, Yuji Takakuwa, Nobuo Miyamoto, Atsushi Hiraiwa, Kunihiro Yaqi

Research output: Contribution to journalArticle

68 Citations (Scopus)
Original languageEnglish
Pages (from-to)195-200
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume9
Issue number2
DOIs
Publication statusPublished - 1991 Mar 1
Externally publishedYes

Fingerprint

Photoemission
Oxide films
oxide films
photoelectric emission
Thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Photoemission study of the SiO2 /Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces. / Niwano, Michio; Katakura, Hitoshi; Takeda, Yuki; Takakuwa, Yuji; Miyamoto, Nobuo; Hiraiwa, Atsushi; Yaqi, Kunihiro.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 9, No. 2, 01.03.1991, p. 195-200.

Research output: Contribution to journalArticle

Niwano, Michio ; Katakura, Hitoshi ; Takeda, Yuki ; Takakuwa, Yuji ; Miyamoto, Nobuo ; Hiraiwa, Atsushi ; Yaqi, Kunihiro. / Photoemission study of the SiO2 /Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1991 ; Vol. 9, No. 2. pp. 195-200.
@article{a0dc5cf0e05a472a8969bd236353b662,
title = "Photoemission study of the SiO2 /Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces",
author = "Michio Niwano and Hitoshi Katakura and Yuki Takeda and Yuji Takakuwa and Nobuo Miyamoto and Atsushi Hiraiwa and Kunihiro Yaqi",
year = "1991",
month = "3",
day = "1",
doi = "10.1116/1.577520",
language = "English",
volume = "9",
pages = "195--200",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - Photoemission study of the SiO2 /Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces

AU - Niwano, Michio

AU - Katakura, Hitoshi

AU - Takeda, Yuki

AU - Takakuwa, Yuji

AU - Miyamoto, Nobuo

AU - Hiraiwa, Atsushi

AU - Yaqi, Kunihiro

PY - 1991/3/1

Y1 - 1991/3/1

UR - http://www.scopus.com/inward/record.url?scp=0001228437&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001228437&partnerID=8YFLogxK

U2 - 10.1116/1.577520

DO - 10.1116/1.577520

M3 - Article

VL - 9

SP - 195

EP - 200

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 2

ER -