Photoluminescence analysis of Czochralski-grown lanthanum aluminate single crystals

Kotaro Kanai; Eiji Hirata; Yoshimichi Ohki

doi:10.1143/JJAP.47.7980

Photoluminescence analysis of Czochralski-grown lanthanum aluminate single crystals

Kotaro Kanai, Eiji Hirata^*, Yoshimichi Ohki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Photoluminescence (PL) spectra induced by ultraviolet photons were measured for Czochralski-grown lanthanum aluminate single crystals. Five PL peaks were observed at approximately 1.60, 1.64, 1.675, 2.0, and 2.8 eV at 10K, and the 2.8 eV PL disappears at 300 K. From PL excitation and vacuum ultraviolet absorption measurements, it is found that the 2.8 eV PL arises owing to the excitation of electrons to localized states in the band gap, and that PLs at approximately 1.60, 1.64, and 1.675 eV arise owing to the excitation of electrons to the conduction band. The 2.0 eV PL with a decay profile similar to that of the 2.8 eV PL is assumed to be caused by a process similar to that in the case of the 2.8 eV PL.

Original language	English
Pages (from-to)	7980-7982
Number of pages	3
Journal	Japanese journal of applied physics
Volume	47
Issue number	10 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.7980
Publication status	Published - 2008 Oct 1

Keywords

Defect
High permittivity
High-k gate dielectric
Lanthanum aluminate
Photoluminescence
Single crystal

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{7cde7c5cd8b649d1ae15882062e66b00,

title = "Photoluminescence analysis of Czochralski-grown lanthanum aluminate single crystals",

abstract = "Photoluminescence (PL) spectra induced by ultraviolet photons were measured for Czochralski-grown lanthanum aluminate single crystals. Five PL peaks were observed at approximately 1.60, 1.64, 1.675, 2.0, and 2.8 eV at 10K, and the 2.8 eV PL disappears at 300 K. From PL excitation and vacuum ultraviolet absorption measurements, it is found that the 2.8 eV PL arises owing to the excitation of electrons to localized states in the band gap, and that PLs at approximately 1.60, 1.64, and 1.675 eV arise owing to the excitation of electrons to the conduction band. The 2.0 eV PL with a decay profile similar to that of the 2.8 eV PL is assumed to be caused by a process similar to that in the case of the 2.8 eV PL.",

keywords = "Defect, High permittivity, High-k gate dielectric, Lanthanum aluminate, Photoluminescence, Single crystal",

author = "Kotaro Kanai and Eiji Hirata and Yoshimichi Ohki",

year = "2008",

month = oct,

day = "1",

doi = "10.1143/JJAP.47.7980",

language = "English",

volume = "47",

pages = "7980--7982",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10 PART 1",

}

TY - JOUR

T1 - Photoluminescence analysis of Czochralski-grown lanthanum aluminate single crystals

AU - Kanai, Kotaro

AU - Hirata, Eiji

AU - Ohki, Yoshimichi

PY - 2008/10/1

Y1 - 2008/10/1

N2 - Photoluminescence (PL) spectra induced by ultraviolet photons were measured for Czochralski-grown lanthanum aluminate single crystals. Five PL peaks were observed at approximately 1.60, 1.64, 1.675, 2.0, and 2.8 eV at 10K, and the 2.8 eV PL disappears at 300 K. From PL excitation and vacuum ultraviolet absorption measurements, it is found that the 2.8 eV PL arises owing to the excitation of electrons to localized states in the band gap, and that PLs at approximately 1.60, 1.64, and 1.675 eV arise owing to the excitation of electrons to the conduction band. The 2.0 eV PL with a decay profile similar to that of the 2.8 eV PL is assumed to be caused by a process similar to that in the case of the 2.8 eV PL.

AB - Photoluminescence (PL) spectra induced by ultraviolet photons were measured for Czochralski-grown lanthanum aluminate single crystals. Five PL peaks were observed at approximately 1.60, 1.64, 1.675, 2.0, and 2.8 eV at 10K, and the 2.8 eV PL disappears at 300 K. From PL excitation and vacuum ultraviolet absorption measurements, it is found that the 2.8 eV PL arises owing to the excitation of electrons to localized states in the band gap, and that PLs at approximately 1.60, 1.64, and 1.675 eV arise owing to the excitation of electrons to the conduction band. The 2.0 eV PL with a decay profile similar to that of the 2.8 eV PL is assumed to be caused by a process similar to that in the case of the 2.8 eV PL.

KW - Defect

KW - High permittivity

KW - High-k gate dielectric

KW - Lanthanum aluminate

KW - Photoluminescence

KW - Single crystal

UR - http://www.scopus.com/inward/record.url?scp=62249192744&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62249192744&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.7980

DO - 10.1143/JJAP.47.7980

M3 - Article

AN - SCOPUS:62249192744

SN - 0021-4922

VL - 47

SP - 7980

EP - 7982

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 10 PART 1

ER -

Photoluminescence analysis of Czochralski-grown lanthanum aluminate single crystals

Abstract

Keywords

ASJC Scopus subject areas

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