Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

Takashi Noma, Kwang Soo Seol, Makoto Fujimaki, Hiromitsu Kato, Takashi Watanabe, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

    Original languageEnglish
    Pages (from-to)6587-6593
    Number of pages7
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume39
    Issue number12 A
    Publication statusPublished - 2000 Dec 1

    Fingerprint

    oxynitrides
    oxygen plasma
    Luminescence
    Photoluminescence
    luminescence
    photoluminescence
    Plasmas
    Silicon
    Oxygen
    silicon
    Plasma enhanced chemical vapor deposition
    Fourier transform infrared spectroscopy
    Paramagnetic resonance
    electron paramagnetic resonance
    X ray photoelectron spectroscopy
    infrared spectroscopy
    photoelectron spectroscopy
    vapor deposition
    Scanning electron microscopy
    scanning electron microscopy

    Keywords

    • Luminescence
    • PECVD
    • Photoluminescence
    • Silicon nitride
    • Silicon oxide
    • Silicon oxynitride

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films. / Noma, Takashi; Seol, Kwang Soo; Fujimaki, Makoto; Kato, Hiromitsu; Watanabe, Takashi; Ohki, Yoshimichi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 12 A, 01.12.2000, p. 6587-6593.

    Research output: Contribution to journalArticle

    Noma, Takashi ; Seol, Kwang Soo ; Fujimaki, Makoto ; Kato, Hiromitsu ; Watanabe, Takashi ; Ohki, Yoshimichi. / Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2000 ; Vol. 39, No. 12 A. pp. 6587-6593.
    @article{a8f0cb4b83754af590b368b7be9dfc76,
    title = "Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films",
    abstract = "Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.",
    keywords = "Luminescence, PECVD, Photoluminescence, Silicon nitride, Silicon oxide, Silicon oxynitride",
    author = "Takashi Noma and Seol, {Kwang Soo} and Makoto Fujimaki and Hiromitsu Kato and Takashi Watanabe and Yoshimichi Ohki",
    year = "2000",
    month = "12",
    day = "1",
    language = "English",
    volume = "39",
    pages = "6587--6593",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "12 A",

    }

    TY - JOUR

    T1 - Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

    AU - Noma, Takashi

    AU - Seol, Kwang Soo

    AU - Fujimaki, Makoto

    AU - Kato, Hiromitsu

    AU - Watanabe, Takashi

    AU - Ohki, Yoshimichi

    PY - 2000/12/1

    Y1 - 2000/12/1

    N2 - Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

    AB - Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

    KW - Luminescence

    KW - PECVD

    KW - Photoluminescence

    KW - Silicon nitride

    KW - Silicon oxide

    KW - Silicon oxynitride

    UR - http://www.scopus.com/inward/record.url?scp=0034474673&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0034474673&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:0034474673

    VL - 39

    SP - 6587

    EP - 6593

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 12 A

    ER -