Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

Takashi Noma; Kwang Soo Seol; Makoto Fujimaki; Hiromitsu Kato; Takashi Watanabe; Yoshimichi Ohki

doi:10.1143/jjap.39.6587

Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

Takashi Noma^*, Kwang Soo Seol, Makoto Fujimaki, Hiromitsu Kato, Takashi Watanabe, Yoshimichi Ohki

^*Corresponding author for this work

Kagami Memorial Research Institute for Materials Science and Technology

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO₂ were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiN_x was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

Original language	English
Pages (from-to)	6587-6593
Number of pages	7
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.39.6587
Publication status	Published - 2000 Dec 1

Keywords

Luminescence
PECVD
Photoluminescence
Silicon nitride
Silicon oxide
Silicon oxynitride

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films",

abstract = "Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.",

keywords = "Luminescence, PECVD, Photoluminescence, Silicon nitride, Silicon oxide, Silicon oxynitride",

author = "Takashi Noma and Seol, {Kwang Soo} and Makoto Fujimaki and Hiromitsu Kato and Takashi Watanabe and Yoshimichi Ohki",

year = "2000",

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doi = "10.1143/jjap.39.6587",

language = "English",

volume = "39",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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TY - JOUR

T1 - Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

AU - Noma, Takashi

AU - Seol, Kwang Soo

AU - Fujimaki, Makoto

AU - Kato, Hiromitsu

AU - Watanabe, Takashi

AU - Ohki, Yoshimichi

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

AB - Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

KW - Luminescence

KW - PECVD

KW - Photoluminescence

KW - Silicon nitride

KW - Silicon oxide

KW - Silicon oxynitride

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EP - 6593

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 12 A

ER -

Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

Abstract

Keywords

ASJC Scopus subject areas

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