Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, K. S. Seol, Yoshimichi Ohki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

Original languageEnglish
Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
Editors Anon
Place of PublicationTokyo, Japan
PublisherInst Elec Eng Japan
Pages59-62
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
Duration: 1998 Sep 271998 Sep 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

Fingerprint

Amorphous films
Plasma enhanced chemical vapor deposition
Paramagnetic resonance
Photoluminescence
Oxygen
Defects
Point defects
Ions
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Seol, K. S., & Ohki, Y. (1998). Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. In Anon (Ed.), Proceedings of the International Symposium on Electrical Insulating Materials (pp. 59-62). Tokyo, Japan: Inst Elec Eng Japan.

Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. / Nishikawa, H.; Fukui, H.; Watanabe, E.; Ito, D.; Seol, K. S.; Ohki, Yoshimichi.

Proceedings of the International Symposium on Electrical Insulating Materials. ed. / Anon. Tokyo, Japan : Inst Elec Eng Japan, 1998. p. 59-62.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishikawa, H, Fukui, H, Watanabe, E, Ito, D, Seol, KS & Ohki, Y 1998, Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. in Anon (ed.), Proceedings of the International Symposium on Electrical Insulating Materials. Inst Elec Eng Japan, Tokyo, Japan, pp. 59-62, Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, 98/9/27.
Nishikawa H, Fukui H, Watanabe E, Ito D, Seol KS, Ohki Y. Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. In Anon, editor, Proceedings of the International Symposium on Electrical Insulating Materials. Tokyo, Japan: Inst Elec Eng Japan. 1998. p. 59-62
Nishikawa, H. ; Fukui, H. ; Watanabe, E. ; Ito, D. ; Seol, K. S. ; Ohki, Yoshimichi. / Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. Proceedings of the International Symposium on Electrical Insulating Materials. editor / Anon. Tokyo, Japan : Inst Elec Eng Japan, 1998. pp. 59-62
@inproceedings{9438bf406c6f4c42aa6abb02e2003459,
title = "Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films",
abstract = "The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.",
author = "H. Nishikawa and H. Fukui and E. Watanabe and D. Ito and Seol, {K. S.} and Yoshimichi Ohki",
year = "1998",
language = "English",
pages = "59--62",
editor = "Anon",
booktitle = "Proceedings of the International Symposium on Electrical Insulating Materials",
publisher = "Inst Elec Eng Japan",

}

TY - GEN

T1 - Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

AU - Nishikawa, H.

AU - Fukui, H.

AU - Watanabe, E.

AU - Ito, D.

AU - Seol, K. S.

AU - Ohki, Yoshimichi

PY - 1998

Y1 - 1998

N2 - The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

AB - The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

UR - http://www.scopus.com/inward/record.url?scp=0032318228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032318228&partnerID=8YFLogxK

M3 - Conference contribution

SP - 59

EP - 62

BT - Proceedings of the International Symposium on Electrical Insulating Materials

A2 - Anon, null

PB - Inst Elec Eng Japan

CY - Tokyo, Japan

ER -