Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, K. S. Seol, Yoshimichi Ohki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

Original languageEnglish
Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
Editors Anon
Place of PublicationTokyo, Japan
PublisherInst Elec Eng Japan
Pages59-62
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
Duration: 1998 Sep 271998 Sep 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

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ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Seol, K. S., & Ohki, Y. (1998). Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. In Anon (Ed.), Proceedings of the International Symposium on Electrical Insulating Materials (pp. 59-62). Inst Elec Eng Japan.