Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO 2 films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, Yoshimichi Ohki

Research output: Chapter in Book/Report/Conference proceedingChapter

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Abstract

Photoluminescence (PL) and electron-spin-resonance (ESR) studies were carried out on thermal SiO 2 films after B + or P + implantation. Two PL bands at 4.3 eV and 2.6 eV were observed. For the 4.3-eV bands, two PL excitation bands were observed at 5.0 eV and 7.4 eV. Based on the comparison with those observed in oxygen-deficient-type bulk SiO 2, the 4.3 eV and 2.6 eV PL bands are ascribed to oxygen vacancies induced by ion implantation. The decay of the 4.3-eV band in ion-implanted thermal SiO 2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetime. The ESR signal of the paramagnetic E′ centers in ion-implanted thermal SiO 2 films were found to be broadened by dipole-dipole interactions between the closely spaced defects. The PL and ESR results suggest that the oxygen vacancies induced by ion implantation in thermal SiO 2 films are perturbed by the local network structures.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages97-102
Number of pages6
Volume196-201
Editionpt 1
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

Other

OtherProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)
CitySendai, Jpn
Period95/7/2395/7/28

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Takiyama, M., Ieki, A., & Ohki, Y. (1995). Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO 2 films In Materials Science Forum (pt 1 ed., Vol. 196-201, pp. 97-102). Trans Tech Publ.