Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

W. He, S. L. Lu, D. S. Jiang, J. R. Dong, A. Tackeuchi, H. Yang

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Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge (Ga,In)-V (Ga,In)] complexes. A strong evidence to support the existence of [Ge (Ga,In)- Si (Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge (Ga,In)-V (Ga,In)] and [Ge (Ga,In)-Si (Ga,In)] complexes.

Original languageEnglish
Article number023509
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 2012 Jul 15


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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