Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

W. He; S. L. Lu; D. S. Jiang; J. R. Dong; A. Tackeuchi; H. Yang

doi:10.1063/1.4737611

Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

W. He^*, S. L. Lu, D. S. Jiang, J. R. Dong, A. Tackeuchi, H. Yang

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge _(Ga,In)-V _(Ga,In)] complexes. A strong evidence to support the existence of [Ge _(Ga,In)- Si _(Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge _(Ga,In)-V _(Ga,In)] and [Ge _(Ga,In)-Si _(Ga,In)] complexes.

Original language	English
Article number	023509
Journal	Journal of Applied Physics
Volume	112
Issue number	2
DOIs	https://doi.org/10.1063/1.4737611
Publication status	Published - 2012 Jul 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{2906eee8246f4a99b942699097b299d1,

title = "Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium",

abstract = "Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge (Ga,In)-V (Ga,In)] complexes. A strong evidence to support the existence of [Ge (Ga,In)- Si (Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge (Ga,In)-V (Ga,In)] and [Ge (Ga,In)-Si (Ga,In)] complexes.",

author = "W. He and Lu, {S. L.} and Jiang, {D. S.} and Dong, {J. R.} and A. Tackeuchi and H. Yang",

note = "Funding Information: This work was financially supported by the International Cooperation Project of MOST (Grant No. 2009DFR60420), Suzhou solar cell research project (Grant Nos. ZXJ0903, Y1SAQ31001), NSFC (No. 61176128), CAS (Grant Nos. Y2BAQ11001, Y0BAQ51001), and by a SINANO grant (Y1AAQ11002). The authors would like to thank T. Ishizuka and N. Asaka of Waseda University for their help in the TR-PL measurements.",

year = "2012",

month = jul,

day = "15",

doi = "10.1063/1.4737611",

language = "English",

volume = "112",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

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TY - JOUR

T1 - Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

AU - He, W.

AU - Lu, S. L.

AU - Jiang, D. S.

AU - Dong, J. R.

AU - Tackeuchi, A.

AU - Yang, H.

N1 - Funding Information: This work was financially supported by the International Cooperation Project of MOST (Grant No. 2009DFR60420), Suzhou solar cell research project (Grant Nos. ZXJ0903, Y1SAQ31001), NSFC (No. 61176128), CAS (Grant Nos. Y2BAQ11001, Y0BAQ51001), and by a SINANO grant (Y1AAQ11002). The authors would like to thank T. Ishizuka and N. Asaka of Waseda University for their help in the TR-PL measurements.

PY - 2012/7/15

Y1 - 2012/7/15

N2 - Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge (Ga,In)-V (Ga,In)] complexes. A strong evidence to support the existence of [Ge (Ga,In)- Si (Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge (Ga,In)-V (Ga,In)] and [Ge (Ga,In)-Si (Ga,In)] complexes.

AB - Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge (Ga,In)-V (Ga,In)] complexes. A strong evidence to support the existence of [Ge (Ga,In)- Si (Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge (Ga,In)-V (Ga,In)] and [Ge (Ga,In)-Si (Ga,In)] complexes.

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VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

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