Abstract
Hydrogenated amorphous silicon (a-Si : H) nanoball film emits photoluminescence only after being thermally oxidized, because the oxidized film is sufficiently transparent that excitation laser light can reach Si nanocrystal. We fabricated amorphous silicon nitride (a-SiNH) nanoball film by reacting N 2 plasma and SiH4 gas. Without being thermally oxidized, this film was highly transparent and exhibited photoluminescence. The source of this photoluminescence is presumed to be either the quantum size effect of Si nanocrystal or electronic transitions in siloxane (Si-O-Si), which is present at the interface between Si nanocrystal and SiO 2. By coating the a-SiNH nanoball film with SiN film, we fabricated a-SiNH nanoball film that was siloxane-free but that exhibited photoluminescence. Hence, we attribute the observed photoluminescence to the quantum size effect of Si nanocrystal.
| Original language | English |
|---|---|
| Pages (from-to) | 24-27 |
| Number of pages | 4 |
| Journal | Journal of the Vacuum Society of Japan |
| Volume | 55 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 |
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ASJC Scopus subject areas
- Spectroscopy
- Materials Science(all)
- Instrumentation
- Surfaces and Interfaces
Cite this
Photoluminescence characteristics of amorphous slicon nitride nanoball film prevented from oxidizing in air. / Funatsu, Tomoki; Kato, Isamu.
In: Journal of the Vacuum Society of Japan, Vol. 55, No. 1, 2012, p. 24-27.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Photoluminescence characteristics of amorphous slicon nitride nanoball film prevented from oxidizing in air
AU - Funatsu, Tomoki
AU - Kato, Isamu
PY - 2012
Y1 - 2012
N2 - Hydrogenated amorphous silicon (a-Si : H) nanoball film emits photoluminescence only after being thermally oxidized, because the oxidized film is sufficiently transparent that excitation laser light can reach Si nanocrystal. We fabricated amorphous silicon nitride (a-SiNH) nanoball film by reacting N 2 plasma and SiH4 gas. Without being thermally oxidized, this film was highly transparent and exhibited photoluminescence. The source of this photoluminescence is presumed to be either the quantum size effect of Si nanocrystal or electronic transitions in siloxane (Si-O-Si), which is present at the interface between Si nanocrystal and SiO 2. By coating the a-SiNH nanoball film with SiN film, we fabricated a-SiNH nanoball film that was siloxane-free but that exhibited photoluminescence. Hence, we attribute the observed photoluminescence to the quantum size effect of Si nanocrystal.
AB - Hydrogenated amorphous silicon (a-Si : H) nanoball film emits photoluminescence only after being thermally oxidized, because the oxidized film is sufficiently transparent that excitation laser light can reach Si nanocrystal. We fabricated amorphous silicon nitride (a-SiNH) nanoball film by reacting N 2 plasma and SiH4 gas. Without being thermally oxidized, this film was highly transparent and exhibited photoluminescence. The source of this photoluminescence is presumed to be either the quantum size effect of Si nanocrystal or electronic transitions in siloxane (Si-O-Si), which is present at the interface between Si nanocrystal and SiO 2. By coating the a-SiNH nanoball film with SiN film, we fabricated a-SiNH nanoball film that was siloxane-free but that exhibited photoluminescence. Hence, we attribute the observed photoluminescence to the quantum size effect of Si nanocrystal.
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U2 - 10.3131/jvsj2.55.24
DO - 10.3131/jvsj2.55.24
M3 - Article
AN - SCOPUS:84857247492
VL - 55
SP - 24
EP - 27
JO - Journal of the Vacuum Society of Japan
JF - Journal of the Vacuum Society of Japan
SN - 1882-2398
IS - 1
ER -