Photoluminescence characteristics of amorphous slicon nitride nanoball film prevented from oxidizing in air

Tomoki Funatsu, Isamu Kato

Research output: Contribution to journalArticle

Abstract

Hydrogenated amorphous silicon (a-Si : H) nanoball film emits photoluminescence only after being thermally oxidized, because the oxidized film is sufficiently transparent that excitation laser light can reach Si nanocrystal. We fabricated amorphous silicon nitride (a-SiNH) nanoball film by reacting N 2 plasma and SiH4 gas. Without being thermally oxidized, this film was highly transparent and exhibited photoluminescence. The source of this photoluminescence is presumed to be either the quantum size effect of Si nanocrystal or electronic transitions in siloxane (Si-O-Si), which is present at the interface between Si nanocrystal and SiO 2. By coating the a-SiNH nanoball film with SiN film, we fabricated a-SiNH nanoball film that was siloxane-free but that exhibited photoluminescence. Hence, we attribute the observed photoluminescence to the quantum size effect of Si nanocrystal.

Original languageEnglish
Pages (from-to)24-27
Number of pages4
JournalJournal of the Vacuum Society of Japan
Volume55
Issue number1
DOIs
Publication statusPublished - 2012

Fingerprint

Nitrides
nitrides
Photoluminescence
photoluminescence
air
Nanocrystals
Air
nanocrystals
Siloxanes
siloxanes
Amorphous silicon
amorphous silicon
Plasma Gases
Laser excitation
Silicon nitride
silicon nitrides
Plasmas
coatings
Coatings
Gases

ASJC Scopus subject areas

  • Spectroscopy
  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Photoluminescence characteristics of amorphous slicon nitride nanoball film prevented from oxidizing in air. / Funatsu, Tomoki; Kato, Isamu.

In: Journal of the Vacuum Society of Japan, Vol. 55, No. 1, 2012, p. 24-27.

Research output: Contribution to journalArticle

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