Photoluminescence from a: Si-H nanoball films fabricated by double tubed coaxial line type microwave plasma CVD system

Isamu Kato, Yoshio Kawahara, O. R. Agnihotri

Research output: Contribution to journalArticle

Abstract

Using a double tubed coaxial line type microwave plasma CVD system, a-Si:H nanoball films which include Si nanocrystals can be fabricated. The photoluminescence (PL) is observed at the room temperature after the a-Si:H nanoball film is oxidized by heating in the atmosphere or the pure oxygen gas. We have fabricated a-Si:H nanoball films with varying the parameters of fabrication conditions and oxidation conditions, and discussed the film properties and the PL characteristics of a-Si:H nanoball films. We have also discussed the influence of the ion bombardment energy and analyzed the mechanism of the creation of Si nanocrystals and estimated theoretically the number of the Si nanocrystals.

Original languageEnglish
JournalUnknown Journal
Volume3975
Publication statusPublished - 2000

Fingerprint

Plasma CVD
Photoluminescence
Microwaves
vapor deposition
photoluminescence
microwaves
Nanocrystals
nanocrystals
Ion bombardment
bombardment
Heating
Fabrication
atmospheres
Oxidation
oxidation
fabrication
heating
Oxygen
room temperature
oxygen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Photoluminescence from a : Si-H nanoball films fabricated by double tubed coaxial line type microwave plasma CVD system. / Kato, Isamu; Kawahara, Yoshio; Agnihotri, O. R.

In: Unknown Journal, Vol. 3975, 2000.

Research output: Contribution to journalArticle

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