Using a double tubed coaxial line type microwave plasma CVD system, a-Si:H nanoball films which include Si nanocrystals can be fabricated. The photoluminescence (PL) is observed at the room temperature after the a-Si:H nanoball film is oxidized by heating in the atmosphere or the pure oxygen gas. We have fabricated a-Si:H nanoball films with varying the parameters of fabrication conditions and oxidation conditions, and discussed the film properties and the PL characteristics of a-Si:H nanoball films. We have also discussed the influence of the ion bombardment energy and analyzed the mechanism of the creation of Si nanocrystals and estimated theoretically the number of the Si nanocrystals.
|Publication status||Published - 2000|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics