Photoluminescence from thermally oxidized hydrogenated amorphous silicon nanoball films fabricated by double-tubed-coaxial-line-type microwave plasma chemical vapor deposition system

Isamu Kato, Takayuki Matsumoto, O. P. Agnihotri

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Using a double-tubed-coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system, hydrogenated amorphous silicon (a-Si:H) nanoball films, which include Si nanocrystals, can be fabricated. A high deposition rate of 1600 Å/s is achieved at a gas flow rate of 30 ml/min. Photoluminescence (PL) around 780 nm is observed at room temperature after the a-Si:H nanoball film is thermally oxidized in air or in pure oxygen gas. We have fabricated thermally oxidized a-Si:H nanoball films under various fabrication and oxidation conditions. As the substrate temperature during deposition becomes higher, the PL intensity decreases, and PL cannot be observed above 200°C. The PL intensity is the strongest when the substrate is set about 6 cm from the discharge tube end. As the discharge time increases, the film thickness increases and saturates, and consequently the PL intensity increases and also saturates.

Original languageEnglish
Pages (from-to)6862-6867
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number12
Publication statusPublished - 2001 Dec

Keywords

  • A-Si:H nanoball
  • Chemical vapor deposition
  • Microwave plasma
  • Photoluminescence
  • Si nanocrystal
  • Thermal oxidation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Photoluminescence from thermally oxidized hydrogenated amorphous silicon nanoball films fabricated by double-tubed-coaxial-line-type microwave plasma chemical vapor deposition system'. Together they form a unique fingerprint.

  • Cite this