Photoluminescence in polysilane alloys

N. Matsumoto, S. Furukawa, K. Takeda

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Polysilane alloys are prepared by the rf glow discharge of disilane. The microscopic structure, which depends on substrate temperature, is discussed by measuring the infrared absorption spectrum and dangling bond density. Temperature dependence of the photoluminescence of polysilane alloys is measured and compared with that of conventional a-Si:H film. Based on the microscopic structure and calculated energy level for polysilane molecules, a three dimensional quantum well model is proposed for the band structure of polysilane alloys. This model is consistent with photoluminescence and related optical properties.

Original languageEnglish
Pages (from-to)881-884
Number of pages4
JournalSolid State Communications
Volume53
Issue number10
DOIs
Publication statusPublished - 1985 Mar

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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