Photoluminescence in polysilane alloys

N. Matsumoto, S. Furukawa, Kyozaburo Takeda

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Polysilane alloys are prepared by the rf glow discharge of disilane. The microscopic structure, which depends on substrate temperature, is discussed by measuring the infrared absorption spectrum and dangling bond density. Temperature dependence of the photoluminescence of polysilane alloys is measured and compared with that of conventional a-Si:H film. Based on the microscopic structure and calculated energy level for polysilane molecules, a three dimensional quantum well model is proposed for the band structure of polysilane alloys. This model is consistent with photoluminescence and related optical properties.

Original languageEnglish
Pages (from-to)881-884
Number of pages4
JournalSolid State Communications
Volume53
Issue number10
DOIs
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Polysilanes
polysilanes
Photoluminescence
photoluminescence
Dangling bonds
Infrared absorption
Glow discharges
glow discharges
Band structure
Electron energy levels
Semiconductor quantum wells
infrared absorption
Absorption spectra
infrared spectra
Optical properties
energy levels
quantum wells
absorption spectra
optical properties
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Photoluminescence in polysilane alloys. / Matsumoto, N.; Furukawa, S.; Takeda, Kyozaburo.

In: Solid State Communications, Vol. 53, No. 10, 1985, p. 881-884.

Research output: Contribution to journalArticle

Matsumoto, N. ; Furukawa, S. ; Takeda, Kyozaburo. / Photoluminescence in polysilane alloys. In: Solid State Communications. 1985 ; Vol. 53, No. 10. pp. 881-884.
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