Photoluminescence of oxygen-deficient-type defects in a-SiO2

N. Nishikawa, Y. Miyake, E. Watanabe, D. Ito, K. S. Seol, Yoshimichi Ohki, K. Ishii, Y. Sakurai, K. Nagasawa

    Research output: Contribution to journalArticle

    36 Citations (Scopus)

    Abstract

    Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at ∼ 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).

    Original languageEnglish
    Pages (from-to)221-227
    Number of pages7
    JournalJournal of Non-Crystalline Solids
    Volume222
    Publication statusPublished - 1997 Dec 11

    Fingerprint

    Photoluminescence
    Oxygen
    photoluminescence
    Defects
    defects
    oxygen
    Oxides
    Dosimetry
    dosage
    oxides
    decay
    Plasma enhanced chemical vapor deposition
    diagrams
    Irradiation
    vapor deposition
    Ions
    life (durability)
    temperature dependence
    irradiation
    configurations

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Electronic, Optical and Magnetic Materials

    Cite this

    Nishikawa, N., Miyake, Y., Watanabe, E., Ito, D., Seol, K. S., Ohki, Y., ... Nagasawa, K. (1997). Photoluminescence of oxygen-deficient-type defects in a-SiO2 Journal of Non-Crystalline Solids, 222, 221-227.

    Photoluminescence of oxygen-deficient-type defects in a-SiO2 . / Nishikawa, N.; Miyake, Y.; Watanabe, E.; Ito, D.; Seol, K. S.; Ohki, Yoshimichi; Ishii, K.; Sakurai, Y.; Nagasawa, K.

    In: Journal of Non-Crystalline Solids, Vol. 222, 11.12.1997, p. 221-227.

    Research output: Contribution to journalArticle

    Nishikawa, N, Miyake, Y, Watanabe, E, Ito, D, Seol, KS, Ohki, Y, Ishii, K, Sakurai, Y & Nagasawa, K 1997, 'Photoluminescence of oxygen-deficient-type defects in a-SiO2 ', Journal of Non-Crystalline Solids, vol. 222, pp. 221-227.
    Nishikawa N, Miyake Y, Watanabe E, Ito D, Seol KS, Ohki Y et al. Photoluminescence of oxygen-deficient-type defects in a-SiO2 Journal of Non-Crystalline Solids. 1997 Dec 11;222:221-227.
    Nishikawa, N. ; Miyake, Y. ; Watanabe, E. ; Ito, D. ; Seol, K. S. ; Ohki, Yoshimichi ; Ishii, K. ; Sakurai, Y. ; Nagasawa, K. / Photoluminescence of oxygen-deficient-type defects in a-SiO2 In: Journal of Non-Crystalline Solids. 1997 ; Vol. 222. pp. 221-227.
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    AU - Miyake, Y.

    AU - Watanabe, E.

    AU - Ito, D.

    AU - Seol, K. S.

    AU - Ohki, Yoshimichi

    AU - Ishii, K.

    AU - Sakurai, Y.

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