Photoluminescence of oxygen-deficient-type defects in a-SiO2

N. Nishikawa; Y. Miyake; E. Watanabe; D. Ito; K. S. Seol; Y. Ohki; K. Ishii; Y. Sakurai; K. Nagasawa

doi:10.1016/S0022-3093(97)00398-0

Photoluminescence of oxygen-deficient-type defects in a-SiO₂

N. Nishikawa^*, Y. Miyake, E. Watanabe, D. Ito, K. S. Seol, Y. Ohki, K. Ishii, Y. Sakurai, K. Nagasawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

35 Citations (Scopus)

Abstract

Oxygen-deficient-type defects in a-SiO₂ were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO₂ can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at approximately 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO₂ after high-dose γ-irradiation (dose: 10 MGy).

Original language	English
Pages (from-to)	221-227
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	222
DOIs	https://doi.org/10.1016/S0022-3093(97)00398-0
Publication status	Published - 1997 Dec 2
Event	Proceedings of the 1997 14th University Conference on Glass Science - Bethlehem, PA, USA Duration: 1997 Jun 17 → 1997 Jun 20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(97)00398-0

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@article{8c90dc90444b4554aef87a30b36a0568,

title = "Photoluminescence of oxygen-deficient-type defects in a-SiO2",

abstract = "Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at approximately 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).",

author = "N. Nishikawa and Y. Miyake and E. Watanabe and D. Ito and Seol, {K. S.} and Y. Ohki and K. Ishii and Y. Sakurai and K. Nagasawa",

year = "1997",

month = dec,

day = "2",

doi = "10.1016/S0022-3093(97)00398-0",

language = "English",

volume = "222",

pages = "221--227",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

note = "Proceedings of the 1997 14th University Conference on Glass Science ; Conference date: 17-06-1997 Through 20-06-1997",

}

TY - JOUR

T1 - Photoluminescence of oxygen-deficient-type defects in a-SiO2

AU - Nishikawa, N.

AU - Miyake, Y.

AU - Watanabe, E.

AU - Ito, D.

AU - Seol, K. S.

AU - Ohki, Y.

AU - Ishii, K.

AU - Sakurai, Y.

AU - Nagasawa, K.

PY - 1997/12/2

Y1 - 1997/12/2

N2 - Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at approximately 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).

AB - Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at approximately 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).

UR - http://www.scopus.com/inward/record.url?scp=0031550078&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031550078&partnerID=8YFLogxK

U2 - 10.1016/S0022-3093(97)00398-0

DO - 10.1016/S0022-3093(97)00398-0

M3 - Conference article

AN - SCOPUS:0031550078

SN - 0022-3093

VL - 222

SP - 221

EP - 227

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - Proceedings of the 1997 14th University Conference on Glass Science

Y2 - 17 June 1997 through 20 June 1997

ER -

Photoluminescence of oxygen-deficient-type defects in a-SiO₂

Abstract

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