Photoluminescence of oxygen-deficient-type defects in a-SiO2

N. Nishikawa, Y. Miyake, E. Watanabe, D. Ito, K. S. Seol, Y. Ohki, K. Ishii, Y. Sakurai, K. Nagasawa

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Abstract

Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at ∼ 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).

Original languageEnglish
Pages (from-to)221-227
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume222
Publication statusPublished - 1997 Dec 11

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Nishikawa, N., Miyake, Y., Watanabe, E., Ito, D., Seol, K. S., Ohki, Y., Ishii, K., Sakurai, Y., & Nagasawa, K. (1997). Photoluminescence of oxygen-deficient-type defects in a-SiO2. Journal of Non-Crystalline Solids, 222, 221-227.