Abstract
We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.
| Original language | English |
|---|---|
| Pages (from-to) | 189-192 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2009 Apr 6 |
| Externally published | Yes |
| Event | 8th International Conference on Excitonic Processes in Condensed Matter, EXCON'08 - Kyoto, Japan Duration: 2008 Jun 22 → 2008 Jun 27 |
ASJC Scopus subject areas
- Condensed Matter Physics
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Cite this
Hiratsuka, S., Saravanan, S., Harayama, T., & Ohtani, N. (2009). Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(1), 189-192. https://doi.org/10.1002/pssc.200879827