Abstract
We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.
| Original language | English |
|---|---|
| Pages (from-to) | 189-192 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers. / Hiratsuka, Shingo; Saravanan, Shanugam; Harayama, Takahisa; Ohtani, Naoki.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. 1, 2009, p. 189-192.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers
AU - Hiratsuka, Shingo
AU - Saravanan, Shanugam
AU - Harayama, Takahisa
AU - Ohtani, Naoki
PY - 2009
Y1 - 2009
N2 - We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.
AB - We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.
UR - http://www.scopus.com/inward/record.url?scp=63449120363&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63449120363&partnerID=8YFLogxK
U2 - 10.1002/pssc.200879827
DO - 10.1002/pssc.200879827
M3 - Article
AN - SCOPUS:63449120363
VL - 6
SP - 189
EP - 192
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 1
ER -