Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers

Shingo Hiratsuka; Shanugam Saravanan; Takahisa Harayama; Naoki Ohtani

doi:10.1002/pssc.200879827

Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers

Shingo Hiratsuka^*, Shanugam Saravanan, Takahisa Harayama, Naoki Ohtani

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.

Original language	English
Pages (from-to)	189-192
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200879827
Publication status	Published - 2009
Externally published	Yes
Event	8th International Conference on Excitonic Processes in Condensed Matter, EXCON'08 - Kyoto, Japan Duration: 2008 Jun 22 → 2008 Jun 27

ASJC Scopus subject areas

Condensed Matter Physics

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@article{576831d4c6384edbad0733073407cd90,

title = "Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers",

abstract = "We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.",

author = "Shingo Hiratsuka and Shanugam Saravanan and Takahisa Harayama and Naoki Ohtani",

year = "2009",

doi = "10.1002/pssc.200879827",

language = "English",

volume = "6",

pages = "189--192",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "8th International Conference on Excitonic Processes in Condensed Matter, EXCON'08 ; Conference date: 22-06-2008 Through 27-06-2008",

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TY - JOUR

T1 - Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers

AU - Hiratsuka, Shingo

AU - Saravanan, Shanugam

AU - Harayama, Takahisa

AU - Ohtani, Naoki

PY - 2009

Y1 - 2009

N2 - We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.

AB - We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.

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U2 - 10.1002/pssc.200879827

DO - 10.1002/pssc.200879827

M3 - Conference article

AN - SCOPUS:63449120363

VL - 6

SP - 189

EP - 192

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 1

T2 - 8th International Conference on Excitonic Processes in Condensed Matter, EXCON'08

Y2 - 22 June 2008 through 27 June 2008

ER -

Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers

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