Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers

Shingo Hiratsuka, Shanugam Saravanan, Takahisa Harayama, Naoki Ohtani

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.

Original languageEnglish
Pages (from-to)189-192
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number1
DOIs
Publication statusPublished - 2009
Externally publishedYes

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quantum dots
photoluminescence
annealing
wavelengths
temperature
temperature dependence

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers. / Hiratsuka, Shingo; Saravanan, Shanugam; Harayama, Takahisa; Ohtani, Naoki.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. 1, 2009, p. 189-192.

Research output: Contribution to journalArticle

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