Photoluminescence properties of hydrogenated amorphous silicon nitride

Norihide Kashio, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
    Pages79-82
    Number of pages4
    Publication statusPublished - 2001
    EventProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji
    Duration: 2001 Nov 192001 Nov 22

    Other

    OtherProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
    CityHimeji
    Period01/11/1901/11/22

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    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)

    Cite this

    Kashio, N., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Photoluminescence properties of hydrogenated amorphous silicon nitride. In Proceedings of the International Symposium on Electrical Insulating Materials (pp. 79-82)