Photoluminescence properties of hydrogenated amorphous silicon nitride

Norihide Kashio, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
    Pages79-82
    Number of pages4
    Publication statusPublished - 2001
    EventProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji
    Duration: 2001 Nov 192001 Nov 22

    Other

    OtherProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
    CityHimeji
    Period01/11/1901/11/22

    Fingerprint

    Amorphous silicon
    Silicon nitride
    Photoluminescence
    Silicon
    Excitons
    Nitrogen
    silicon nitride

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)

    Cite this

    Kashio, N., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Photoluminescence properties of hydrogenated amorphous silicon nitride. In Proceedings of the International Symposium on Electrical Insulating Materials (pp. 79-82)

    Photoluminescence properties of hydrogenated amorphous silicon nitride. / Kashio, Norihide; Kato, Hiromitsu; Ohki, Yoshimichi; Seol, Kwang Soo; Noma, Takashi.

    Proceedings of the International Symposium on Electrical Insulating Materials. 2001. p. 79-82.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kashio, N, Kato, H, Ohki, Y, Seol, KS & Noma, T 2001, Photoluminescence properties of hydrogenated amorphous silicon nitride. in Proceedings of the International Symposium on Electrical Insulating Materials. pp. 79-82, Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, 01/11/19.
    Kashio N, Kato H, Ohki Y, Seol KS, Noma T. Photoluminescence properties of hydrogenated amorphous silicon nitride. In Proceedings of the International Symposium on Electrical Insulating Materials. 2001. p. 79-82
    Kashio, Norihide ; Kato, Hiromitsu ; Ohki, Yoshimichi ; Seol, Kwang Soo ; Noma, Takashi. / Photoluminescence properties of hydrogenated amorphous silicon nitride. Proceedings of the International Symposium on Electrical Insulating Materials. 2001. pp. 79-82
    @inproceedings{3392379c5572422d9b378d8632437a9c,
    title = "Photoluminescence properties of hydrogenated amorphous silicon nitride",
    abstract = "The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.",
    author = "Norihide Kashio and Hiromitsu Kato and Yoshimichi Ohki and Seol, {Kwang Soo} and Takashi Noma",
    year = "2001",
    language = "English",
    pages = "79--82",
    booktitle = "Proceedings of the International Symposium on Electrical Insulating Materials",

    }

    TY - GEN

    T1 - Photoluminescence properties of hydrogenated amorphous silicon nitride

    AU - Kashio, Norihide

    AU - Kato, Hiromitsu

    AU - Ohki, Yoshimichi

    AU - Seol, Kwang Soo

    AU - Noma, Takashi

    PY - 2001

    Y1 - 2001

    N2 - The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

    AB - The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

    UR - http://www.scopus.com/inward/record.url?scp=0035720904&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0035720904&partnerID=8YFLogxK

    M3 - Conference contribution

    SP - 79

    EP - 82

    BT - Proceedings of the International Symposium on Electrical Insulating Materials

    ER -