Photoluminescence properties of hydrogenated amorphous silicon nitride

Norihide Kashio, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

Conference

ConferenceProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
CountryJapan
CityHimeji
Period01/11/1901/11/22

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Photoluminescence properties of hydrogenated amorphous silicon nitride'. Together they form a unique fingerprint.

  • Cite this

    Kashio, N., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Photoluminescence properties of hydrogenated amorphous silicon nitride. 79-82. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.