Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy, layers on Si formed by ion beam synthesis

H. Katsumata, Naoto Kobayashi, Y. Makita, M. Hasegawa, N. Hayashi, H. Shibata, S. Uekusa

Research output: Contribution to journalArticle

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Abstract

Low temperature (2 K) photoluminescence (PL) properties of epitaxial Si1-x-yGex and Si1-x-yGexCy layers on Si (x = 0.13 and y = 0.014 at peak concentration) formed by ion beam synthesis (IBS) have been investigated. Samples were prepared by a high-dose Ge with/without C ion implantation (I2) at room temperature and by subsequent three different crystallization techniques: (i) furnace annealing (FA) process up to 840°C, (ii) ion beam-induced epitaxial crystallization (IBIEC) process with 400 keV Ge or Ar ions at 300-350°C, and (iii) IBIEC process followed by FA process up to 640°C (IBIEC + FA). Although FA-grown Si1-x-yGexCy samples showed G-line (Cs-Sii-Cs complex) emission at 0.969 eV, IBIEC-grown samples presented a sharp I1 non-phonon emission at 1.0193 eV. This indicates that C atoms agglomeration is dominant for FA-grown samples, while a creation of trigonal tetravacancy cluster is dominant for IBIEC-grown samples. On the other hand, (IBIEC with Ge ions + FA)-grown Si1-x-yGexCy samples showed neither G-line nor I1-related emissions, which indicates that good crystalline Si1-x-yGexCy layers without C agglomeration were formed by this process. In contrast, (IBIEC with Ar ions + FA)-grown samples exhibited novel successive PL vibronic sidebands at 0.98-1.03 eV. From their excitation power dependence measurements, they were found to be associated with exciton bound to defects levels created by Ar+ bombardment.

Original languageEnglish
Pages (from-to)146-150
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume121
Issue number1-4
Publication statusPublished - 1997 Jan
Externally publishedYes

Fingerprint

Crystallization
Ion beams
Photoluminescence
furnaces
ion beams
Furnaces
crystallization
photoluminescence
Annealing
annealing
synthesis
Ions
agglomeration
Agglomeration
ions
sidebands
Excitons
Ion implantation
ion implantation
bombardment

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy, layers on Si formed by ion beam synthesis. / Katsumata, H.; Kobayashi, Naoto; Makita, Y.; Hasegawa, M.; Hayashi, N.; Shibata, H.; Uekusa, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 121, No. 1-4, 01.1997, p. 146-150.

Research output: Contribution to journalArticle

@article{5ddeae1aa5014bf0918dbcc94cadc02a,
title = "Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy, layers on Si formed by ion beam synthesis",
abstract = "Low temperature (2 K) photoluminescence (PL) properties of epitaxial Si1-x-yGex and Si1-x-yGexCy layers on Si (x = 0.13 and y = 0.014 at peak concentration) formed by ion beam synthesis (IBS) have been investigated. Samples were prepared by a high-dose Ge with/without C ion implantation (I2) at room temperature and by subsequent three different crystallization techniques: (i) furnace annealing (FA) process up to 840°C, (ii) ion beam-induced epitaxial crystallization (IBIEC) process with 400 keV Ge or Ar ions at 300-350°C, and (iii) IBIEC process followed by FA process up to 640°C (IBIEC + FA). Although FA-grown Si1-x-yGexCy samples showed G-line (Cs-Sii-Cs complex) emission at 0.969 eV, IBIEC-grown samples presented a sharp I1 non-phonon emission at 1.0193 eV. This indicates that C atoms agglomeration is dominant for FA-grown samples, while a creation of trigonal tetravacancy cluster is dominant for IBIEC-grown samples. On the other hand, (IBIEC with Ge ions + FA)-grown Si1-x-yGexCy samples showed neither G-line nor I1-related emissions, which indicates that good crystalline Si1-x-yGexCy layers without C agglomeration were formed by this process. In contrast, (IBIEC with Ar ions + FA)-grown samples exhibited novel successive PL vibronic sidebands at 0.98-1.03 eV. From their excitation power dependence measurements, they were found to be associated with exciton bound to defects levels created by Ar+ bombardment.",
author = "H. Katsumata and Naoto Kobayashi and Y. Makita and M. Hasegawa and N. Hayashi and H. Shibata and S. Uekusa",
year = "1997",
month = "1",
language = "English",
volume = "121",
pages = "146--150",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy, layers on Si formed by ion beam synthesis

AU - Katsumata, H.

AU - Kobayashi, Naoto

AU - Makita, Y.

AU - Hasegawa, M.

AU - Hayashi, N.

AU - Shibata, H.

AU - Uekusa, S.

PY - 1997/1

Y1 - 1997/1

N2 - Low temperature (2 K) photoluminescence (PL) properties of epitaxial Si1-x-yGex and Si1-x-yGexCy layers on Si (x = 0.13 and y = 0.014 at peak concentration) formed by ion beam synthesis (IBS) have been investigated. Samples were prepared by a high-dose Ge with/without C ion implantation (I2) at room temperature and by subsequent three different crystallization techniques: (i) furnace annealing (FA) process up to 840°C, (ii) ion beam-induced epitaxial crystallization (IBIEC) process with 400 keV Ge or Ar ions at 300-350°C, and (iii) IBIEC process followed by FA process up to 640°C (IBIEC + FA). Although FA-grown Si1-x-yGexCy samples showed G-line (Cs-Sii-Cs complex) emission at 0.969 eV, IBIEC-grown samples presented a sharp I1 non-phonon emission at 1.0193 eV. This indicates that C atoms agglomeration is dominant for FA-grown samples, while a creation of trigonal tetravacancy cluster is dominant for IBIEC-grown samples. On the other hand, (IBIEC with Ge ions + FA)-grown Si1-x-yGexCy samples showed neither G-line nor I1-related emissions, which indicates that good crystalline Si1-x-yGexCy layers without C agglomeration were formed by this process. In contrast, (IBIEC with Ar ions + FA)-grown samples exhibited novel successive PL vibronic sidebands at 0.98-1.03 eV. From their excitation power dependence measurements, they were found to be associated with exciton bound to defects levels created by Ar+ bombardment.

AB - Low temperature (2 K) photoluminescence (PL) properties of epitaxial Si1-x-yGex and Si1-x-yGexCy layers on Si (x = 0.13 and y = 0.014 at peak concentration) formed by ion beam synthesis (IBS) have been investigated. Samples were prepared by a high-dose Ge with/without C ion implantation (I2) at room temperature and by subsequent three different crystallization techniques: (i) furnace annealing (FA) process up to 840°C, (ii) ion beam-induced epitaxial crystallization (IBIEC) process with 400 keV Ge or Ar ions at 300-350°C, and (iii) IBIEC process followed by FA process up to 640°C (IBIEC + FA). Although FA-grown Si1-x-yGexCy samples showed G-line (Cs-Sii-Cs complex) emission at 0.969 eV, IBIEC-grown samples presented a sharp I1 non-phonon emission at 1.0193 eV. This indicates that C atoms agglomeration is dominant for FA-grown samples, while a creation of trigonal tetravacancy cluster is dominant for IBIEC-grown samples. On the other hand, (IBIEC with Ge ions + FA)-grown Si1-x-yGexCy samples showed neither G-line nor I1-related emissions, which indicates that good crystalline Si1-x-yGexCy layers without C agglomeration were formed by this process. In contrast, (IBIEC with Ar ions + FA)-grown samples exhibited novel successive PL vibronic sidebands at 0.98-1.03 eV. From their excitation power dependence measurements, they were found to be associated with exciton bound to defects levels created by Ar+ bombardment.

UR - http://www.scopus.com/inward/record.url?scp=0031546196&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031546196&partnerID=8YFLogxK

M3 - Article

VL - 121

SP - 146

EP - 150

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -