Photoluminescence study of defects in ion-implanted thermal SiO2 films

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Makoto Takiyama, Akihito Ieki, Yoshimichi Ohki

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Abstract

Photoluminescence (PL) study was performed on B or P ion-implanted thermal SiO2 films. Two PL bands at 4.3 and 2.6 eV were observed. For the 4.3 eV bands, two PL excitation (PLE) bands were observed at 5.0 and 7.4 eV. Based on the close similarities of the PL and PLE bands to those observed in oxygen-deficient-type bulk silica, the 4.3 and 2.6 eV PL bands are ascribed to the oxygen-deficient-type defects induced by ion implantation. While the 4.3 eV PL band in the bulk SiO2 decays exponentially, the decay of the corresponding PL band in the implanted thermal SiO2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetimes. This suggests that the oxygen-deficient-type defects induced by the ion implantation in thermal SiO2 films are perturbed by the structural distribution of the surrounding Si-O-Si network, including the concentration of PL quenching centers.

Original languageEnglish
Pages (from-to)842-846
Number of pages5
JournalJournal of Applied Physics
Volume78
Issue number2
DOIs
Publication statusPublished - 1995 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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