Photoluminescence study of ZnSe-ZnTe strained-layer superlattices grown on InP substrates

Masakazu Kobayashi, Naoki Mino, Hironori Katagiri, Ryuhei Kimura, Makoto Konagai, Kiyoshi Takahashi

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Optical properties of ZnSe-ZnTe strained-layer superlattice (SLS) grown on InP substrates were evaluated by photoluminescence. The luminescence peak intensity and position were affected by the photoexcitation intensity. The line shape was also affected by the growth temperature. The peak position was shifted by tailoring the structure of the superlattice, but it did not correlate exactly with previously reported theoretical values. We have reconsidered their data, and a better result on theoretical calulation was achieved. The luminescence color changed in the visible region from green to red. This SLS could be a new material for optoelectronic devices.

Original languageEnglish
Pages (from-to)773-778
Number of pages6
JournalJournal of Applied Physics
Volume60
Issue number2
DOIs
Publication statusPublished - 1986
Externally publishedYes

Fingerprint

superlattices
luminescence
photoluminescence
optoelectronic devices
photoexcitation
line shape
color
optical properties
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence study of ZnSe-ZnTe strained-layer superlattices grown on InP substrates. / Kobayashi, Masakazu; Mino, Naoki; Katagiri, Hironori; Kimura, Ryuhei; Konagai, Makoto; Takahashi, Kiyoshi.

In: Journal of Applied Physics, Vol. 60, No. 2, 1986, p. 773-778.

Research output: Contribution to journalArticle

Kobayashi, Masakazu ; Mino, Naoki ; Katagiri, Hironori ; Kimura, Ryuhei ; Konagai, Makoto ; Takahashi, Kiyoshi. / Photoluminescence study of ZnSe-ZnTe strained-layer superlattices grown on InP substrates. In: Journal of Applied Physics. 1986 ; Vol. 60, No. 2. pp. 773-778.
@article{8445a68227a94771ac992c0333a6d9e7,
title = "Photoluminescence study of ZnSe-ZnTe strained-layer superlattices grown on InP substrates",
abstract = "Optical properties of ZnSe-ZnTe strained-layer superlattice (SLS) grown on InP substrates were evaluated by photoluminescence. The luminescence peak intensity and position were affected by the photoexcitation intensity. The line shape was also affected by the growth temperature. The peak position was shifted by tailoring the structure of the superlattice, but it did not correlate exactly with previously reported theoretical values. We have reconsidered their data, and a better result on theoretical calulation was achieved. The luminescence color changed in the visible region from green to red. This SLS could be a new material for optoelectronic devices.",
author = "Masakazu Kobayashi and Naoki Mino and Hironori Katagiri and Ryuhei Kimura and Makoto Konagai and Kiyoshi Takahashi",
year = "1986",
doi = "10.1063/1.337428",
language = "English",
volume = "60",
pages = "773--778",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Photoluminescence study of ZnSe-ZnTe strained-layer superlattices grown on InP substrates

AU - Kobayashi, Masakazu

AU - Mino, Naoki

AU - Katagiri, Hironori

AU - Kimura, Ryuhei

AU - Konagai, Makoto

AU - Takahashi, Kiyoshi

PY - 1986

Y1 - 1986

N2 - Optical properties of ZnSe-ZnTe strained-layer superlattice (SLS) grown on InP substrates were evaluated by photoluminescence. The luminescence peak intensity and position were affected by the photoexcitation intensity. The line shape was also affected by the growth temperature. The peak position was shifted by tailoring the structure of the superlattice, but it did not correlate exactly with previously reported theoretical values. We have reconsidered their data, and a better result on theoretical calulation was achieved. The luminescence color changed in the visible region from green to red. This SLS could be a new material for optoelectronic devices.

AB - Optical properties of ZnSe-ZnTe strained-layer superlattice (SLS) grown on InP substrates were evaluated by photoluminescence. The luminescence peak intensity and position were affected by the photoexcitation intensity. The line shape was also affected by the growth temperature. The peak position was shifted by tailoring the structure of the superlattice, but it did not correlate exactly with previously reported theoretical values. We have reconsidered their data, and a better result on theoretical calulation was achieved. The luminescence color changed in the visible region from green to red. This SLS could be a new material for optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=0344177796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344177796&partnerID=8YFLogxK

U2 - 10.1063/1.337428

DO - 10.1063/1.337428

M3 - Article

VL - 60

SP - 773

EP - 778

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -